LBC857AWT1G - описание и поиск аналогов

 

LBC857AWT1G. Аналоги и основные параметры

Наименование производителя: LBC857AWT1G

Маркировка: 3E

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 120

Корпус транзистора: SC70

 Аналоги (замена) для LBC857AWT1G

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LBC857AWT1G даташит

 ..1. Size:254K  lrc
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LBC857AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

 ..2. Size:284K  lrc
lbc857awt1g.pdfpdf_icon

LBC857AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon CWT1G These transistors are designed for general purpose LBC858AWT1G, BWT1G amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features S-LBC857AWT1G, BWT1G We declare that the

 7.1. Size:159K  lrc
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LBC857AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdfpdf_icon

LBC857AWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

Другие транзисторы: LMBTH10LT1G, LMBTH10QLT1G, LMBTH10WT1G, LBC856ALT1G, LBC856BDW1T1G, LBC856BLT1G, LBC856BWT1G, LBC857ALT1G, C3198, LBC857BDW1T1G, LBC857BLT1G, LBC857BTT1G, LBC857BWT1G, LBC857CDW1T1G, LBC857CLT1G, LBC857CWT1G, LBC858ALT1G

 

 

 

 

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