LBC857AWT1G Specs and Replacement
Type Designator: LBC857AWT1G
SMD Transistor Code: 3E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SC70
LBC857AWT1G Substitution
- BJT ⓘ Cross-Reference Search
LBC857AWT1G datasheet
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf ![]()
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product ... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon CWT1G These transistors are designed for general purpose LBC858AWT1G, BWT1G amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features S-LBC857AWT1G, BWT1G We declare that the... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒
lbc857att1g lbc857btt1g lbc857ctt1g.pdf ![]()
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri... See More ⇒
Detailed specifications: LMBTH10LT1G, LMBTH10QLT1G, LMBTH10WT1G, LBC856ALT1G, LBC856BDW1T1G, LBC856BLT1G, LBC856BWT1G, LBC857ALT1G, C3198, LBC857BDW1T1G, LBC857BLT1G, LBC857BTT1G, LBC857BWT1G, LBC857CDW1T1G, LBC857CLT1G, LBC857CWT1G, LBC858ALT1G
Keywords - LBC857AWT1G pdf specs
LBC857AWT1G cross reference
LBC857AWT1G equivalent finder
LBC857AWT1G pdf lookup
LBC857AWT1G substitution
LBC857AWT1G replacement
History: CS9103B
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
tip31 transistor | 2sc1384 | mj21196g | irfb4115 | 21270 transistor | k3569 | irf640 datasheet | c945 transistor equivalent








