2N649-22 datasheet, аналоги, основные параметры
Наименование производителя: 2N649-22 📄📄
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 120 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 12 MHz
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO5
📄📄 Копировать
Аналоги (замена) для 2N649-22
- подборⓘ биполярного транзистора по параметрам
2N649-22 даташит
9.3. Size:151K motorola
2n6487 2n6488 2n6490 2n6491.pdf 
Order this document MOTOROLA by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 Complementary Silicon Plastic Power Transistors * 2N6488 PNP . . . designed for use in general purpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490 hFE = 20 150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc 2N6491* Collector Emitter Sustaining
9.4. Size:148K motorola
2n6497 2n6498.pdf 
Order this document MOTOROLA by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power *Motorola Preferred Device Transistors 5 AMPERE . . . designed for high voltage inverters, switching regulators and line operated POWER TRANSISTORS amplifier applications. Especially well suited for switching power supply applications. NPN SILICON High Collecto
9.5. Size:52K st
2n6487 2n6488 2n6490.pdf 
2N6487 2N6488/2N6490 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low 3 2 frequency switching applications. 1 The 2N6487 complementary type is 2N6490.
9.7. Size:74K onsemi
2n6497-d.pdf 
2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications. http //onsemi.com Features 5 AMPERE High Collector-Emitter Sustaining Voltage - VCEO(sus) = 250 Vdc (Min) POWER TRANSISTORS Excellent DC Current
9.8. Size:234K onsemi
2n6487 2n6488 2n6490 2n6491.pdf 
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and www.onsemi.com switching applications. Features 15 AMPERE High DC Current Gain COMPLEMENTARY SILICON High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package 60-80 VOLTS, 75 WATTS These
9.10. Size:185K bocasemi
2n6497 2n6498 2n6499.pdf 
A Boca Semiconductor Corp. (BSC) http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com A
9.11. Size:160K bocasemi
2n6494 2n6594.pdf 
A Boca Semiconductor Corp http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com
9.12. Size:267K cdil
2n6486-9 2n6490-1.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3
9.13. Size:146K jmnic
2n6492.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2N6492 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximu
9.14. Size:97K jmnic
2n6491.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6491 DESCRIPTION With TO-220 package Complement to type 2N6488 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m
9.15. Size:155K jmnic
2n6489 2n6490 2n6491.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outli
9.16. Size:109K jmnic
2n6490.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6490 DESCRIPTION With TO-220 package Complement to type 2N6487 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m
9.17. Size:113K inchange semiconductor
2n6497 2n6498 2n6499.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 DC Current Gain- hFE= 10-75@IC= 2.5A APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applica
9.18. Size:187K inchange semiconductor
2n6492.pdf 
isc Silicon NPN Darlington Power Transistor 2N6492 DESCRIPTION High DC current gain h = 500(Min)@ I = 3A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low frequency swithing applications. ABSOLUTE MAXI
9.19. Size:185K inchange semiconductor
2n6495.pdf 
isc Silicon NPN Power Transistor 2N6495 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO With TO-66 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.20. Size:187K inchange semiconductor
2n6493.pdf 
isc Silicon NPN Darlington Power Transistor 2N6493 DESCRIPTION High DC current gain h = 500(Min)@ I = 3A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low frequency swithing applications. ABSOLUTE MAXI
9.21. Size:121K inchange semiconductor
2n6489 2n6490 2n6491.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1
9.22. Size:187K inchange semiconductor
2n6494.pdf 
isc Silicon NPN Darlington Power Transistor 2N6494 DESCRIPTION High DC current gain h = 500(Min)@ I = 3A FE C With TO-3 package Low collector saturation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and low frequency swithing applications. ABSOLUTE MAXI
Другие транзисторы: 2N6486, 2N6487, 2N6488, 2N6489, 2N649, 2N6490, 2N6491, 2N6492, 2SA1015, 2N6493, 2N6494, 2N6495, 2N649-5, 2N6496, 2N6497, 2N6498, 2N6499
