SEMICONDUCTORFTA1270TECHNICAL DATAGeneral Purpose TransistorB CPNP SiliconFEATURE DIM MILLIMETERSComplementary NPN Type available (FTC3202) A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85 MAXIMUM RATINGS (TA=25 unless otherwise noted) H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Units L 2.30F FM 0.51 MAXVCBO Collector-Base V

SEMICONDUCTORFTA1274 TECHNICAL DATATO 92L FTA1274 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Complementary to FTC3227 3. BASE General Purpose Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current

SEMICONDUCTORFTA1271TECHNICAL DATAGeneral Purpose TransistorB CPNP SiliconFEATURE DIM MILLIMETERS High DC Current Gain A 4.70 MAXEB 4.80 MAXG Complementary to KTC3203 C 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HSymbo Parameter Value Unit J 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage -

SEMICONDUCTORFTA1275 TECHNICAL DATABFTA1275 TRANSISTOR (PNP) EDIM MILLIMETERSFEATURES A 8.2 MAXDB 5.1 MAX High Voltage C 1.58 MAXD 0.55 MAX Large Continuous Collector Current Capability E 0.7 TYPF 1.27 TYPG 2.54 TYP Complementary to FTC3228 FH 14.20 MAX GJ 0.45 MAX L 4.10 MAX C1. EMITTER L1 2 32. COLLECTOR 3. BASE TO-92LMAXIMUM RATINGS