FTD2058 datasheet, аналоги, основные параметры
Наименование производителя: FTD2058 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 35 pf
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO220F
📄📄 Копировать
Аналоги (замена) для FTD2058
- подборⓘ биполярного транзистора по параметрам
FTD2058 даташит
..1. Size:291K first silicon
ftd2058.pdf 
SEMICONDUCTOR FTD2058 TECHNICAL DATA FTD2058 TRANSISTOR (NPN) TO-220F FEATURES Low VCE(sat) VCE(sat)=1.0V(Max.) (IC/IB=2A/0.2A) 1. BASE Complementary to FTB1366 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Co
0.1. Size:306K first silicon
ftd2058f.pdf 
SEMICONDUCTOR FTD2058F TECHNICAL DATA C A FTD2058F TRANSISTOR (NPN) E DIM MILLIMETERS _ A 10 16 0 20 + _ B 15 00 0 20 + FEATURES _ C 3 00 0 20 + Low VCE(sat) VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) D 0 625 0 125 E 3 50 typ Complementary to FTB1366F F 2 7 typ _ G 16 80 0 4 + L M _ H 0 45 0 1 R + _ J 13 20 + 0 20 MAXIMUM RATINGS (Ta=25 unless otherwise noted)
9.1. Size:33K sanyo
ftd2005.pdf 
Ordering number ENN6429 N-Channel Silicon MOSFET FTD2005 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2005] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7
9.2. Size:41K sanyo
ftd2014.pdf 
Ordering number ENN6267 N-Channel Silicon MOSFET FTD2014 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2014] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2
9.3. Size:42K sanyo
ftd2019.pdf 
Ordering number ENN6383 N-Channel Silicon MOSFET FTD2019 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2019] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8
9.4. Size:42K sanyo
ftd2017.pdf 
Ordering number ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2017] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8
9.5. Size:41K sanyo
ftd2022.pdf 
Ordering number ENN6462 N-Channel Silicon MOSFET FTD2022 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2155A Mounting height 1.1mm. [FTD2022] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8
9.6. Size:34K sanyo
ftd2007.pdf 
Ordering number ENN6430 N-Channel Silicon MOSFET FTD2007 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2155A Mounting height 1.1mm. [FTD2007] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 S
9.7. Size:76K sanyo
ftd2013.pdf 
Ordering number ENN6080A N-Channel Silicon MOSFET FTD2013 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2013] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2
9.8. Size:41K sanyo
ftd2015.pdf 
Ordering number ENN6393 N-Channel Silicon MOSFET FTD2015 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2155A Mounting height 1.1mm. [FTD2015] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2 8
9.9. Size:29K sanyo
ftd2008.pdf 
Ordering number ENN7002 FTD2008 N-Channel Silicon MOSFET FTD2008 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2155A Mounting height 1.1mm. [FTD2008] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 3 Source1 4 Gate1 1 4 5 Gate2 0.125 6 Source2 0.25 7
9.10. Size:69K sanyo
ftd2011.pdf 
Ordering number ENN6072A N-Channel Silicon MOSFET FTD2011 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2155A Mounting height 1.1mm. [FTD2011] Composite type, facilitating high-density mounting. 3.0 0.425 0.65 8 5 1 Drain1 2 Source1 1 4 3 Source1 0.125 4 Gate1 0.25 5 Gate2 6 Source2 7 Source2
9.11. Size:239K first silicon
ftd2098.pdf 
SEMICONDUCTOR FTD2098 TECHNICAL DATA FTD2098 FEATURES A C Excellent DC current gain characteristics H G Complements the FTB1386 D D MAXIMUM RATINGS (Ta=25 unless otherwise noted) K F F DIM MILLIMETERS Symbol Parameter Value Unit A 4.70 MAX _ + B 2.50 0.20 VCBO Collector-Base Voltage 50 V C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 VCEO Collector-Emitter Voltage 20 V E
9.12. Size:172K first silicon
ftd2097.pdf 
SEMICONDUCTOR FTD2097 TECHNICAL DATA TRANSISTOR (NPN) B C Low VCE(sat) Transistor(Strobe flash) FEATURES DIM MILLIMETERS Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) A 4.70 MAX E B 4.80 MAX G Excellent Dc current gain characteristics C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 MAXIMUM RATINGS (Ta=25 unless otherwise noted) _ H J 14.00 + 0.50 L
9.13. Size:76K kexin
ftd2019.pdf 
SMD Type Transistors Dual N-Channel Enhancement Mode MOSFET FTD2019 TSSOP-8 Features Unit mm RDS(ON)=28m Max. @VGS=4V RDS(ON)=35m Max. @VGS=2.5V 1 Drain1 2 Source1 3 Source1 4 Gate1 D1 D2 5 Gate2 S2 S1 6 Source2 S2 S1 7 Source2 G2 D1 8 Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.14. Size:74K kexin
ftd2011.pdf 
SMD Type MOSFET Dual N-Channel Enhancement Mode MOSFET FTD2011 TSSOP-8 Unit mm Features RDS(ON)=30m Max. @VGS=4V RDS(ON)=45m Max. @VGS=2.5V 1 Drain1 2 Source1 3 Source1 4 Gate1 5 Gate2 6 Source2 D1 D2 7 Source2 S1 S2 8 Drain2 S1 S2 G1 G2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V G
9.15. Size:985K cn vbsemi
ftd2017a.pdf 
FTD2017A www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATI
9.16. Size:2022K cn vbsemi
ftd2017.pdf 
FTD2017 www.VBsemi.tw Dual N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V Available 6.6 25 RoHS* 0.032 at VGS = 2.5 V 5.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATIN
Другие транзисторы: FTD1304, FTD1499, FTD1616A, FTD1624, FTD1760, FTD1781K, FTD1898, FTD1899, 2SB817, FTD2058F, FTD2097, FTD2098, FTD2114K, FTD2118, FTD4240, FTD880, FTD882
