Биполярный транзистор FTD2058
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: FTD2058
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 3
MHz
Ёмкость коллекторного перехода (Cc): 35
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
TO220F
Аналоги (замена) для FTD2058
FTD2058
Datasheet (PDF)
..1. Size:291K first silicon
ftd2058.pdf 
SEMICONDUCTORFTD2058TECHNICAL DATA FTD2058 TRANSISTOR (NPN) TO-220F FEATURES Low VCE(sat): VCE(sat)=1.0V(Max.) (IC/IB=2A/0.2A)1. BASE Complementary to FTB1366 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Co
0.1. Size:306K first silicon
ftd2058f.pdf 
SEMICONDUCTORFTD2058FTECHNICAL DATACA FTD2058F TRANSISTOR (NPN) E DIM MILLIMETERS_A 10 16 0 20+_B 15 00 0 20+FEATURES _C 3 00 0 20+Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) D 0 6250 125E 3 50 typComplementary to FTB1366F F 2 7 typ_G 16 80 0 4+LM_H 0 45 0 1R +_J 13 20 + 0 20MAXIMUM RATINGS (Ta=25 unless otherwise noted)
9.1. Size:33K sanyo
ftd2005.pdf 
Ordering number:ENN6429N-Channel Silicon MOSFETFTD2005Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2005] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 :
9.2. Size:41K sanyo
ftd2014.pdf 
Ordering number:ENN6267N-Channel Silicon MOSFETFTD2014Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2014] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 43 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2
9.3. Size:42K sanyo
ftd2019.pdf 
Ordering number:ENN6383N-Channel Silicon MOSFETFTD2019Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2019] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28
9.4. Size:42K sanyo
ftd2017.pdf 
Ordering number:ENN6361N-Channel Silicon MOSFETFTD2017Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2017] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28
9.5. Size:41K sanyo
ftd2022.pdf 
Ordering number:ENN6462N-Channel Silicon MOSFETFTD2022Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2155A Mounting height 1.1mm.[FTD2022] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28 :
9.6. Size:34K sanyo
ftd2007.pdf 
Ordering number:ENN6430N-Channel Silicon MOSFETFTD2007Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2155A Mounting height 1.1mm.[FTD2007] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : S
9.7. Size:76K sanyo
ftd2013.pdf 
Ordering number:ENN6080AN-Channel Silicon MOSFETFTD2013Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2013] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2
9.8. Size:41K sanyo
ftd2015.pdf 
Ordering number:ENN6393N-Channel Silicon MOSFETFTD2015Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2155A Mounting height 1.1mm.[FTD2015] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28 :
9.9. Size:29K sanyo
ftd2008.pdf 
Ordering number : ENN7002FTD2008N-Channel Silicon MOSFETFTD2008DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2155A Mounting height 1.1mm.[FTD2008] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source13 : Source14 : Gate11 45 : Gate20.1256 : Source20.257
9.10. Size:69K sanyo
ftd2011.pdf 
Ordering number:ENN6072AN-Channel Silicon MOSFETFTD2011Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2011] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2
9.11. Size:239K first silicon
ftd2098.pdf 
SEMICONDUCTORFTD2098TECHNICAL DATAFTD2098 FEATURES AC Excellent DC current gain characteristics HG Complements the FTB1386 DDMAXIMUM RATINGS (Ta=25 unless otherwise noted) KF FDIM MILLIMETERSSymbol Parameter Value UnitA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage 50 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage 20 V E
9.12. Size:172K first silicon
ftd2097.pdf 
SEMICONDUCTORFTD2097TECHNICAL DATA TRANSISTOR (NPN) B CLow VCE(sat) Transistor(Strobe flash)FEATURES DIM MILLIMETERS Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A)A 4.70 MAXEB 4.80 MAXG Excellent Dc current gain characteristics C 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45MAXIMUM RATINGS (Ta=25 unless otherwise noted) _HJ 14.00 + 0.50L
9.13. Size:76K kexin
ftd2019.pdf 
SMD Type TransistorsDual N-Channel Enhancement Mode MOSFETFTD2019TSSOP-8 FeaturesUnit: mm RDS(ON)=28m Max. @VGS=4V RDS(ON)=35m Max. @VGS=2.5V1 : Drain12 : Source13 : Source14 : Gate1D1 D25 : Gate2S2S16 : Source2S2S17 : Source2G2D1 8 : Drain2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30
9.14. Size:74K kexin
ftd2011.pdf 
SMD Type MOSFETDual N-Channel Enhancement Mode MOSFETFTD2011TSSOP-8Unit: mm Features RDS(ON)=30m Max. @VGS=4V RDS(ON)=45m Max. @VGS=2.5V1 : Drain12 : Source13 : Source14 : Gate15 : Gate26 : Source2D1D27 : Source2S1S2 8 : Drain2S1 S2G1G2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VG
9.15. Size:985K cn vbsemi
ftd2017a.pdf 
FTD2017Awww.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATI
9.16. Size:2022K cn vbsemi
ftd2017.pdf 
FTD2017www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN
Другие транзисторы... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
