13005 - описание и поиск аналогов

R 13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Charger and Switch-mode power supplies 2 2

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high voltage, high speed power switching 75 WATTS inductive circuits where fall time is critical. They are particula

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS

PHE13005 Silicon diffused power transistor Rev. 03 20 November 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 1.2 Features and benefits Fast switching Low thermal resistance High volt

PHE13005X Silicon diffused power transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications 1.2 Features and benefits Fast switching Isolated package High voltage capab

STX13005 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications TO-92 Compact fluorescent lamp (CFL) TO-92 AMMOPACK Switch mode power supplies (AC-DC converters) Description Figure 1. Internal schematic diagram

STT13005D High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 SOT-32 Flyback and forward single transistor low power converters Figure 1. Inte

STB13005 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1 ) 3 2 Applications 1 I2PAK Electronic ballast for fluorescent lighting Switch mode power supplies Description Figur

STI13005-H High voltage fast-switching NPN power transistor Datasheet - production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation TAB Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting I2PAK Switch mode power supplies Description This device is manufactured using high volta

ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS COMPACT FLUORESCENT LAMP (CFL) 3 2 ELECTRONIC BALLASTS FOR 1 FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The device is

STI13005-1 High voltage fast-switching NPN power transistor Preliminary data Features STI13005-1 is opposite pin out versus standard IPAK package High voltage capability Low spread of dynamic parameters 3 Very high switching speed 2 1 Application IPAK Switch mode power supplies (AC-DC converters) Description Figure 1. Internal schematic diagram The device

STT13005 High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Electronic ballast for fluorescent lighting 1 2 Flyback and forward single transistor low 3 power converters SOT-32 Description Figure 1. Internal schematic diagram The device is manu

MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V 700 V CEV Collector-Emitter Voltage VCEO Collector-

STU13005N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed 3 Application 2 1 Switch mode power supplies (AC-DC converters) IPAK Description This device is manufactured using high voltage Figure 1. Internal schematic diagram multi epitaxial planar technology for high swit

ST13005 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology

KSE13004/13005 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage KSE13004 600 V KSE13005 700 V VCEO Collector-Emitter Voltage KSE13004

PHD13005 NPN power transistor with integrated diode Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L

KSE13005F NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATIONS TO-220F High Speed Switching Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 4 A Collector Current (Pulse) IC 8

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

DATA SHEET MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 V Collector-Emitter Voltage VCEV 700 V Emitter-Base Voltage VEBO 9.0 V Co

A Product Line of Diodes Incorporated Green APT13005D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case TO220F-3, TO251, TO220AB Type C BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 4A High Collector Current Terminals Finish - Matte Tin F

MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http //onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator s, Inverters, Motor Controls, 4 AMPERE Solenoid/Relay drivers and Deflection circuits. NP

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =

UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

STD13005IS NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13005IS STD13005 I-PAK(S) I-PAK(S) Marking Diagram STD Column 1, 2 Device Code 13005 YWW Colu

STD13005 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13005 STD13005 TO-220AB Absolute maximum ratings (Tc=25 ) Characteristic Symbol Ratings Unit Collector-Bas

STD13005F NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13005F STD13005 TO-220F-3L Marking Diagram Column 1 Manufacturer Column 2 Production Information AU

STD13005FC NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code B C E E STD13005FC STD13005 TO-220F-3SL Absolute maximum ratings (Tc=25 ) Characteristic Symbol Ratings Unit Coll

3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBO Collector to Emitter Voltage VCEO 400 V

TS13005CK Taiwan Semiconductor High Voltage NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS Low spread of dynamic parameters PARAMETER VALUE UNIT High switching speed BVCEO 400 V Low base drive requirement BVCBO 700 V Compliant to RoHS Directive 2011/65/EU and in IC 3 A accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 VCE

TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector -Base Voltage 600 V VCEO Collector -Emitter (sus) Voltage 400 V Emitter Base Voltage VEBO

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005D TO-220 Plastic Package with Built in Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V VEBO Emitter Base Voltage 9 V Collector Current Continuous IC 4 A Power Dissipation

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V VEBO Emitter Base Voltage 9 V Collector Current Co

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CDL13005R NPN PLASTIC POWER TRANSISTOR TO-220 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Volt

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistor TO-220-3L 3DD13005ND66 TRANSISTOR (NPN) BASE 1 . FEATURES 2. COLLECTOR Power switching applic

SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHAR

SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times ton=0.8 S(Max.), at IC=2A S(Max.), tf=0.9 High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC S

SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM R

SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collec

SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES Excellent Switching Times ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING

3DD13005(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Continuo

Spec. No. HE6741 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.03.06 MICROELECTRONICS CORP. Page No. 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description Switch Regulators TO-220 PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T =25 C) A Maximum Temperatures Stora

SY semiconductors Shenzhen SY Semiconductors Co. LTD. EB SERIES TRANSISTORS EB13005 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings (Tc=25 ) TO-220 NPN www.DataSheet4U.com PARAMETER SYMBOL VALUE UNIT Collector Voltage VCBO 700 V Base Collector Voltage VCEO 400 V

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD13005DX NPN D / D SERIES TRANSISTORS BLD13005DX NPN D

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005D MAIN CHARACTERISTICS Package I 4A C V 400V CEO P (TO-126/IPAK/IPAK-S3) 40W C P (TO-220/TO-220-S1) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005ED MAIN CHARACTERISTICS Package I 4A C V 450V CEO P (IPAK/TO-126/126F/220HF) 40W C P (DPAK) 50W C P (TO-220/220C/262/263) 75W C TO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 700 V Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 V Collector Current IC 4 A O Power Dissipation (Ta = 25 C) Ptot 2 W O Power Dissipati

RoHS MJE13005A(NPN) RoHS SEMICONDUCTOR Nell High Power Products Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) FEATURES VCEO(SUS) 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 s (Max.) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A) DESCRIPTION These devices are designed for high-

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot W TC=25 60

NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot TC=25 60 W

NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

R H13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R 13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2

R 13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R 13005SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R 13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F

R 13005AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

R 13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Mainly used for 110V power Fluorescent Lamp Electronic Ballast etc 2 2 2

R H13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2

SEMICONDUCTOR MJE13005T TECHNICAL DATA MJE13005T TRANSISTOR (NPN) unit High frequency electronic lighting switching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25 ) 1.25 W C P (Tc=25 ) 50 W C T 150 j T -55 150 stg Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit

SEMICONDUCTOR MJE13005F TECHNICAL DATA C MJE13005F TRANSISTOR (NPN) A SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS _ A 10 16 0 20 + HIGH SPEED DC-DC CONVERTER APPLICATION. _ B 15 00 0 20 + _ C 3 00 0 20 + FLUORESCENT LIGHT BALLASTOR APPLICATION. D 0 625 0 125 E 3 50 typ F 2 7 typ _ G 16 80 0 4 + FEATURES L M _ H 0 45 0 1

WBR13005D1 WBR13005D1 WBR13005D1 WBR13005D1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diode General De

WBP13005D WBP13005D WBP13005D WBP13005D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high Voltage, High speed switching Characteristics required such as lighting system ,switching mode power supply. Absol

SBP13005-O SBP13005-O SBP13005-O SBP13005-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for hig

WBP13005D1 WBP13005D1 WBP13005D1 WBP13005D1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diode General De

SBP13005D SBP13005D SBP13005D SBP13005D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed Minimum Lot-to-Lot h Variation FE Wide Reverse Bias SOA Built-in fr

SBP13005D1 SBP13005D1 SBP13005D1 SBP13005D1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed Minimum Lot-to-Lot h Variation FE Wide Reverse Bias SOA Built-i

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005 General Description Features The APT13005 series are high voltage, high speed, High Switching Speed high efficiency switching transistor, and it is specially High Collector-Emitter Voltage 700V designed for off-line switch mode power supplies with Low Cost low output power. High Efficency The APT13005

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005S General Description Features The APT13005S is a high voltage, high speed, high High Switching Speed efficiency switching transistor, and it is specially High Collector-Emitter Voltage 700V designed for off-line switch mode power supplies with Low Cost low output power. High Efficiency The APT13005S

MJE13005DRB NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25 )

MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P

MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

MJE13005T7(3DD13005T7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

MJE13005Q7(3DD13005Q7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 3.0 A C P

MJE13005VT7(3DD13005VT7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V CBO V 200 V CEO V 9.0 V EBO I 8.0 A C P (Ta=2

MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 A B

MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T

STD13005I NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code E B C E STD13005I STD13005 I-PAK I-PAK Marking Diagram STD Column 1, 2 Device Code 13005 YWW Column 3 Pr

KSH13005A KSH13005A SEMIHOW REV.A1,Oct 2007 KSH130 005A KSH13005A Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 75 Watts TO-220

KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005A KSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

KSG13005AR SEMIHOW REV.A0,Feb 2009 KSG13005AR KSG13005AR Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 3.8 Watts TO-92L CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collec

KSH13005AF KSH13005AF SEMIHOW REV.A1,Oct 2007 KSH130 005AF KSH13005AF Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 75 Watts TO

KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005A KSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

SemiWell Semiconductor SBP13005-S High Voltage Fast Switching NPN Power Transistor Features Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings

SUNROC ALJ13005 TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) MAXI Parameter Value Units Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 2.0 A Collector Power Dissipation PC 50 W Junction Temperature Tj 150 Storag Temperature -55 150 Tstg ELECTRICAL CHARACTERISTICS

E13005-250 Pb E13005-250 Pb Free Plating Product MJE Power Transistor Product specification MJE13005 series Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. E Absolute Maximum Ratings ( Ta = 25 ) Parameter Value Unit l Collector-Base Voltage VCBO 70

E13005-225 Pb E13005-225 Pb Free Plating Product MJE Power Transistor Product specification MJE13005 series Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. E Absolute Maximum Ratings ( Ta = 25 ) Parameter Value Unit l Collector-Base Voltage VCBO 70

E13005D-213 Pb E13005D-213 Pb Free Plating Product MJE Power Transistor with Damping Diode Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________ Absolute Maximum Ratings ( Ta = 25 ) Active anti-saturation netwo

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where

PHE13005 Silicon diffused power transistor 21 January 2014 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance 3

PHE13005X Silicon diffused power transistor Rev.03 - 26 April 2018 Product data sheet 1. General description High-voltage, high-speed planar-passivated, NPN power switching transistor in SOT186A (TO-220F) plastic package for use in high frequency electronic lighting ballast applications 2. Features and benefits Fast switching High voltage capability of 700 V Low thermal re

Isc Silicon NPN Power Transistor MJE13005D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor MJF13005 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.6(Max.) @ I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p

isc Silicon NPN Power Transistor KSH13005 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.6(Max) @ I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are pa

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13005 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;