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13005 Specs and Replacement


   Type Designator: 13005
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
 

 13005 Substitution

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13005 datasheet

 ..1. Size:114K  jdsemi
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13005

R 13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Charger and Switch-mode power supplies 2 2 ... See More ⇒

 0.1. Size:440K  1
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13005

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 0.3. Size:311K  motorola
mje13005.pdf pdf_icon

13005

Order this document MOTOROLA by MJE13005/D SEMICONDUCTOR TECHNICAL DATA * MJE13005 *Motorola Preferred Device Designer's Data Sheet 4 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS These devices are designed for high voltage, high speed power switching 75 WATTS inductive circuits where fall time is critical. They are particula... See More ⇒

Detailed specifications: WNT2F04 , WPT2F42 , WPT2N41 , WPT2F06 , WPT2E33 , WPT2F30 , WPT2N32 , WPT2N31 , BC558 , 13007 , 13009 , 13001-0 , 13001-2 , 13001-A , 13003AD , 13003B , 13005A .

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