All Transistors. 13005 Datasheet

 

13005 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 13005
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 13005 Transistor Equivalent Substitute - Cross-Reference Search

   

13005 Datasheet (PDF)

 ..1. Size:114K  jdsemi
13005.pdf

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R13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.1. Size:440K  1
3dd13005md.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13005MD MAIN CHARACTERISTICS Package IC 4AVCEO 400VPC(TO-220HF) 35WPC(TO-220) 75W APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply

 0.3. Size:311K  motorola
mje13005.pdf

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Order this documentMOTOROLAby MJE13005/DSEMICONDUCTOR TECHNICAL DATA*MJE13005*Motorola Preferred DeviceDesigner's Data Sheet4 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTORNPN Silicon Power Transistors400 VOLTSThese devices are designed for highvoltage, highspeed power switching 75 WATTSinductive circuits where fall time is critical. They are particula

 0.4. Size:55K  philips
phe13005 2.pdf

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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTIONThe PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS

 0.5. Size:400K  philips
phe13005.pdf

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PHE13005Silicon diffused power transistorRev. 03 20 November 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications1.2 Features and benefits Fast switching Low thermal resistance High volt

 0.6. Size:420K  philips
phe13005x.pdf

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PHE13005XSilicon diffused power transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated, NPN power switching transistor in a full pack plastic package for use in high frequency electronic lighting ballast applications1.2 Features and benefits Fast switching Isolated package High voltage capab

 0.7. Size:312K  st
stx13005.pdf

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STX13005High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplicationsTO-92 Compact fluorescent lamp (CFL) TO-92AMMOPACK Switch mode power supplies (AC-DC converters)DescriptionFigure 1. Internal schematic diagram

 0.8. Size:261K  st
stt13005d.pdf

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STT13005DHigh voltage fast-switching NPN power transistorFeatures Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speedApplications12 Electronic ballast for fluorescent lighting 3SOT-32 Flyback and forward single transistor low power convertersFigure 1. Inte

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stb13005.pdf

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STB13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1)32Applications 1I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionFigur

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sti13005h.pdf

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STI13005-HHigh voltage fast-switching NPN power transistorDatasheet - production dataFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operationTAB Very high switching speedApplications321 Electronic ballast for fluorescent lightingI2PAK Switch mode power suppliesDescriptionThis device is manufactured using high volta

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st13005n.pdf

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ST13005NHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: COMPACT FLUORESCENT LAMP (CFL)32 ELECTRONIC BALLASTS FOR1FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIESTO-220DESCRIPTION The device is

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sti13005-1.pdf

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STI13005-1High voltage fast-switching NPN power transistorPreliminary dataFeatures STI13005-1 is opposite pin out versus standard IPAK package High voltage capability Low spread of dynamic parameters3 Very high switching speed21ApplicationIPAK Switch mode power supplies (AC-DC converters)Description Figure 1. Internal schematic diagramThe device

 0.13. Size:263K  st
stt13005.pdf

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STT13005High voltage fast-switching NPN power transistorFeatures High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Electronic ballast for fluorescent lighting12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionFigure 1. Internal schematic diagramThe device is manu

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mje13005.pdf

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MJE13005 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTION The MJE13005 is a silicon multiepitaxial mesaNPN transistor in Jedec TO-220 plastic packageparticularly intended for switch-modeapplications.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV 700 VCEV Collector-Emitter VoltageVCEO Collector-

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stu13005n.pdf

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STU13005NHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speed3Application21 Switch mode power supplies (AC-DC converters)IPAKDescriptionThis device is manufactured using high voltage Figure 1. Internal schematic diagrammulti epitaxial planar technology for high swit

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st13005.pdf

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ST13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications321 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220DescriptionThe device is manufactured using high voltagemulti-epitaxial planar technology

 0.17. Size:48K  fairchild semi
kse13004,13005.pdf

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KSE13004/13005High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : KSE13004 600 V : KSE13005 700 V VCEO Collector-Emitter Voltage : KSE13004

 0.18. Size:181K  nxp
phd13005.pdf

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PHD13005NPN power transistor with integrated diodeRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability L

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kse13005f.pdf

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KSE13005F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 4 A Collector Current (Pulse) IC 8

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mje13004 mje13005.pdf

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DATA SHEETMJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage

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mje13005.pdf

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DATA SHEETMJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13005 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) SYMBOL UNITS Collector-Emitter Voltage VCEO 400 VCollector-Emitter Voltage VCEV 700 VEmitter-Base Voltage VEBO 9.0 VCo

 0.22. Size:543K  diodes
apt13005di-dtf-dt.pdf

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A Product Line ofDiodes IncorporatedGreenAPT13005D450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO220F-3, TO251, TO220AB Type C BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 4A High Collector Current Terminals: Finish - Matte Tin F

 0.23. Size:150K  onsemi
mje13005g.pdf

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MJE13005GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,4 AMPERESolenoid/Relay drivers and Deflection circuits.NP

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mje13005d.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC

 0.25. Size:115K  utc
mje13005d-k.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

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13005ec.pdf

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UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =

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mje13005-k.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100

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mje13005.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

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mje13005g.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100 *

 0.30. Size:226K  auk
std13005is.pdf

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STD13005ISNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C EESTD13005IS STD13005 I-PAK(S) I-PAK(S) Marking Diagram STD Column 1, 2: Device Code 13005 YWW Colu

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std13005.pdf

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STD13005NPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13005 STD13005 TO-220ABAbsolute maximum ratings (Tc=25) Characteristic Symbol Ratings UnitCollector-Bas

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std13005f.pdf

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STD13005FNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C EESTD13005F STD13005 TO-220F-3LMarking Diagram Column 1 : Manufacturer Column 2 : Production Information AU

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std13005fc.pdf

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STD13005FCNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code B C E ESTD13005FC STD13005 TO-220F-3SLAbsolute maximum ratings (Tc=25) Characteristic Symbol Ratings UnitColl

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3dd13005.pdf

13005

3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-220J Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V 700 V CBOCollector to Emitter Voltage VCEO 400 V

 0.35. Size:374K  taiwansemi
ts13005ck.pdf

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TS13005CK Taiwan Semiconductor High Voltage NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS Low spread of dynamic parameters PARAMETER VALUE UNIT High switching speed BVCEO 400 V Low base drive requirement BVCBO 700 V Compliant to RoHS Directive 2011/65/EU and in IC 3 A accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 VCE

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ts13005ci-cz.pdf

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TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

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ts13005 b07.pdf

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TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

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cd13005.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13005TO-220Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector -Base Voltage 600 VVCEOCollector -Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO

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cdl13005d.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13005DTO-220Plastic Packagewith Built in DiodeABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VVEBOEmitter Base Voltage 9 VCollector Current Continuous IC 4 APower Dissipation

 0.40. Size:106K  cdil
cdl13005.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR CDL13005TO-220Plastic PackageUsed in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VVEBOEmitter Base Voltage 9 VCollector Current Co

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cdl13005r.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCDL13005RNPN PLASTIC POWER TRANSISTORTO-220Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VCollector Emitter Volt

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3dd13005nd66.pdf

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistor TO-220-3L 3DD13005ND66 TRANSISTOR (NPN) BASE 1 . FEATURES 2. COLLECTOR Power switching applic

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mje13005d.pdf

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SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR

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mje13005f.pdf

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SEMICONDUCTOR MJE13005FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FLUORESCENT LIGHT BALLASTOR APPLICATION.FEATURESExcellent Switching Times: ton=0.8 S(Max.), at IC=2AS(Max.), tf=0.9High Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25)CHARACTERISTIC S

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mje13005df.pdf

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SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM R

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mje13005dc.pdf

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SEMICONDUCTOR MJE13005DCTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.Built-in Free wheeling Diode makes efficient anti saturation operation.Suitable for half bridge light ballast Applications.Low base drive requirement.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 VVCEOCollec

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mje13005.pdf

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SEMICONDUCTOR MJE13005TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FLUORESCENT LIGHT BALLASTOR APPLICATION.FEATURESExcellent Switching Times: ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING

 0.48. Size:250K  lge
3dd13005.pdf

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3DD13005(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Continuo

 0.49. Size:52K  hsmc
hmje13005.pdf

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Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description Switch Regulators TO-220 PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T =25C) A Maximum Temperatures Stora

 0.50. Size:666K  shenzhen
eb13005.pdf

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SY semiconductors Shenzhen SY Semiconductors Co.LTD.EB SERIES TRANSISTORS EB13005FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOAAPPLICATIONFLUORESCENT LAMP ELECTRONIC BALLASTAbsolute Maximum Ratings (Tc=25) TO-220 NPNwww.DataSheet4U.comPARAMETER SYMBOL VALUE UNITCollector Voltage VCBO 700 VBaseCollector Voltage VCEO 400 V

 0.51. Size:232K  sisemi
mje13005d.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13005DNPN D / D SERIES TRANSISTORS MJE13005DNPN D

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bld13005dx.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS BLD13005DXNPN D / D SERIES TRANSISTORS BLD13005DXNPN D

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mje13005 1.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE

 0.54. Size:232K  sisemi
mje13005.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE /MJE SERIES TRANSISTORS MJE13005NPN MJE

 0.55. Size:302K  jilin sino
3dd13005a.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13005A MAIN CHARACTERISTICS Package IC 4AVCEO 400VPC(TO-126) 40WPC(TO-220C) 75W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

 0.56. Size:719K  jilin sino
3dd13005d.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005D MAIN CHARACTERISTICS Package I 4A CV 400V CEOP (TO-126/IPAK/IPAK-S3) 40W CP (TO-220/TO-220-S1) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency swit

 0.57. Size:571K  jilin sino
3dd13005md.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005MD MAIN CHARACTERISTICS Package I 4A CV 400V CEOP (TO-220HF) 35W CP (TO-220) 75W C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power

 0.58. Size:1011K  jilin sino
3dd13005ed.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005ED MAIN CHARACTERISTICS Package I 4A CV 450V CEOP (IPAK/TO-126/126F/220HF) 40W CP (DPAK) 50W CP (TO-220/220C/262/263) 75W CTO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba

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br3dd13005p8f.pdf

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MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

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mje13005t8.pdf

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MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.61. Size:470K  blue-rocket-elect
br3dd13005p7r.pdf

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MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

 0.62. Size:460K  blue-rocket-elect
mje13005p8.pdf

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MJE13005P8(BR3DD13005P8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High fr

 0.63. Size:470K  blue-rocket-elect
mje13005p7.pdf

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MJE13005P7(BR3DD13005P7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lightin

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mje13005lp7.pdf

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MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.65. Size:439K  blue-rocket-elect
br3dd13005t8f.pdf

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MJE13005T8(BR3DD13005T8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.66. Size:467K  blue-rocket-elect
br3dd13005lp7r.pdf

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MJE13005LP7(BR3DD13005LP7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic light

 0.67. Size:633K  semtech
st13005.pdf

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ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit700 V Collector Base Voltage VCBO 400 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 VCollector Current IC 4 AOPower Dissipation (Ta = 25 C) Ptot 2 WOPower Dissipati

 0.68. Size:273K  nell
mje13005a.pdf

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RoHS MJE13005A(NPN)RoHS SEMICONDUCTORNell High Power ProductsSwitchmode Series NPN Silicon Power Transistors(4A / 400V / 75W)FEATURESVCEO(SUS) 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 ASwitching time - tf = 0.9 s (Max.) @ lC = 2 A 700V blocking capability123TO-220AB(MJE13005A) DESCRIPTION These devices are designed for high-

 0.69. Size:144K  shantou-huashan
ksh13005w.pdf

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13005W HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature

 0.70. Size:152K  crhj
3dd13005 c9d.pdf

13005 13005

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.71. Size:154K  crhj
3dd13005 n8d.pdf

13005 13005

NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.72. Size:147K  crhj
3dd13005 b3.pdf

13005 13005

NPN R 3DD13005 B3 3DD13005 B3 NPN VCEO 450 V IC 2.5 A Ptot TC=25 40 W

 0.73. Size:180K  crhj
3dd13005 a1.pdf

13005 13005

NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

 0.74. Size:170K  crhj
3dd13005 f8-1.pdf

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NPN R 3DD13005 F8-1 3DD13005 F8-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

 0.75. Size:162K  crhj
3dd13005 f9-1.pdf

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NPN R 3DD13005 F9-1 3DD13005 F9-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

 0.76. Size:147K  crhj
3dd13005 f7.pdf

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NPN R 3DD13005 F7 3DD13005 F7 NPN VCEO 400 V IC 6 A Ptot TC=25 65 W

 0.77. Size:156K  crhj
3dd13005 p8d.pdf

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NPN R 3DD13005 P8D 3DD13005 P8D VCEO 400 V NPN IC 2.5 A Ptot TC=25 60 W

 0.78. Size:154K  crhj
3dd13005 f8.pdf

13005 13005

NPN R 3DD13005 F8 3DD13005 F8 NPN VCEO 400 V IC 6 A Ptot TC=25 80 W

 0.79. Size:152K  crhj
3dd13005 c7d.pdf

13005 13005

NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

 0.80. Size:152K  crhj
3dd13005c9d.pdf

13005 13005

NPN R 3DD13005 C9D 3DD13005 C9D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.81. Size:155K  crhj
3dd13005c8d.pdf

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NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.82. Size:148K  crhj
3dd13005n7d.pdf

13005 13005

NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot W TC=25 60

 0.83. Size:147K  crhj
3dd13005f7.pdf

13005 13005

NPN R 3DD13005 F7 3DD13005 F7 NPN VCEO 400 V IC 6 A Ptot TC=25 65 W

 0.84. Size:154K  crhj
3dd13005 c8d.pdf

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NPN R 3DD13005 C8D 3DD13005 C8D NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.85. Size:152K  crhj
3dd13005c7d.pdf

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NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

 0.86. Size:154K  crhj
3dd13005f8.pdf

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NPN R 3DD13005 F8 3DD13005 F8 NPN VCEO 400 V IC 6 A Ptot TC=25 80 W

 0.87. Size:161K  crhj
3dd13005f9-1.pdf

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NPN R 3DD13005 F9-1 3DD13005 F9-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

 0.88. Size:147K  crhj
3dd13005b3.pdf

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NPN R 3DD13005 B3 3DD13005 B3 NPN VCEO 450 V IC 2.5 A Ptot TC=25 40 W

 0.89. Size:145K  crhj
3dd13005g3d.pdf

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NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

 0.90. Size:156K  crhj
3dd13005p8d.pdf

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NPN R 3DD13005 P8D 3DD13005 P8D VCEO 400 V NPN IC 2.5 A Ptot TC=25 60 W

 0.91. Size:155K  crhj
3dd13005 grd.pdf

13005 13005

NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.92. Size:147K  crhj
3dd13005g7d.pdf

13005 13005

NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50

 0.93. Size:146K  crhj
3dd13005 g3d.pdf

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NPN R 3DD13005 G3D 3DD13005 G3D NPN VCEO 400 V IC 4 A Ptot W TC=25 40

 0.94. Size:155K  crhj
3dd13005g8d.pdf

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NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

 0.95. Size:148K  crhj
3dd13005 g7d.pdf

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NPN R 3DD13005 G7D 3DD13005 G7D NPN VCEO 400 V IC 4 A Ptot W TC=25 50

 0.96. Size:145K  crhj
3dd13005a7.pdf

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NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

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3dd13005 b5.pdf

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NPN R 3DD13005 B5 3DD13005 B5 NPN VCEO 450 V IC 2.5 A Ptot TC=25 50 W

 0.98. Size:151K  crhj
3dd13005c3d.pdf

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NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

 0.99. Size:153K  crhj
3dd13005 n7d.pdf

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NPN R 3DD13005 N7D 3DD13005 N7D NPN VCEO 400 V IC 4 A Ptot TC=25 60 W

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3dd13005 c3d.pdf

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NPN R 3DD13005 C3D 3DD13005 C3D NPN VCEO 400 V IC 4 A Ptot TC=25 40 W

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3dd13005n8d.pdf

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NPN R 3DD13005 N8D 3DD13005 N8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

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3dd13005a1.pdf

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NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

 0.103. Size:170K  crhj
3dd13005f8-1.pdf

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NPN R 3DD13005 F8-1 3DD13005 F8-1 VCEO 450 V NPN IC 6 A Ptot TC=25 80 W

 0.104. Size:143K  crhj
3dd13005 a3.pdf

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NPN R 3DD13005 A3 3DD13005 A3 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

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3dd13005 a7.pdf

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NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

 0.106. Size:155K  crhj
3dd13005grd.pdf

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NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

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3dd13005a3.pdf

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NPN R 3DD13005 A3 3DD13005 A3 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

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3dd13005b5.pdf

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NPN R 3DD13005 B5 3DD13005 B5 NPN VCEO 450 V IC 2.5 A Ptot TC=25 50 W

 0.109. Size:155K  crhj
3dd13005 g8d.pdf

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NPN R 3DD13005 G8D 3DD13005 G8D NPN VCEO 400 V IC 4 A Ptot W TC=25 75

 0.110. Size:118K  jdsemi
h13005d 2.pdf

13005 13005

RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.111. Size:116K  jdsemi
s13005ed.pdf

13005 13005

RS13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.112. Size:123K  jdsemi
e13005sdl.pdf

13005 13005

RE13005SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.113. Size:116K  jdsemi
h13005.pdf

13005 13005

RH13005 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.114. Size:117K  jdsemi
13005f.pdf

13005 13005

R13005F www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.115. Size:113K  jdsemi
13005a.pdf

13005 13005

R13005A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.116. Size:117K  jdsemi
13005dl.pdf

13005 13005

R13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.117. Size:113K  jdsemi
s13005a.pdf

13005 13005

RS13005A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.118. Size:117K  jdsemi
13005ed.pdf

13005 13005

R13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.119. Size:120K  jdsemi
h13005adl.pdf

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RH13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.120. Size:117K  jdsemi
13005sd.pdf

13005 13005

R13005SD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.121. Size:116K  jdsemi
13005d.pdf

13005 13005

R13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

 0.122. Size:121K  jdsemi
13005ad.pdf

13005 13005

R13005AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.123. Size:122K  jdsemi
13005sdl.pdf

13005 13005

R13005SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.124. Size:114K  jdsemi
13005s.pdf

13005 13005

R13005S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.125. Size:116K  jdsemi
13005dl 2.pdf

13005 13005

R13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.126. Size:121K  jdsemi
13005adl.pdf

13005 13005

R13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.127. Size:118K  jdsemi
h13005d.pdf

13005 13005

RH13005D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.128. Size:120K  jdsemi
h13005dl.pdf

13005 13005

RH13005DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.129. Size:299K  first silicon
mje13005t.pdf

13005 13005

SEMICONDUCTORMJE13005TTECHNICAL DATA MJE13005T TRANSISTOR (NPN) unitHigh frequency electronic lightingswitching power supply applications. Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P (Ta=25) 1.25 WCP (Tc=25) 50 W CT 150 j T -55150 stg Electrical characteristics(Ta=25) Rating Symbol Test condition Unit

 0.130. Size:251K  first silicon
mje13005f.pdf

13005 13005

SEMICONDUCTORMJE13005FTECHNICAL DATAC MJE13005F TRANSISTOR (NPN) ASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION. E DIM MILLIMETERS_A 10 16 0 20+HIGH SPEED DC-DC CONVERTER APPLICATION._B 15 00 0 20+_C 3 00 0 20+FLUORESCENT LIGHT BALLASTOR APPLICATION.D 0 6250 125E 3 50 typF 2 7 typ_G 16 80 0 4+FEATURES LM_H 0 45 0 1

 0.131. Size:306K  winsemi
wbr13005d1.pdf

13005 13005

WBR13005D1WBR13005D1WBR13005D1WBR13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De

 0.132. Size:392K  winsemi
wbp13005d.pdf

13005 13005

WBP13005DWBP13005DWBP13005DWBP13005DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diodeGeneral DescriptionThis Device is designed for high Voltage, High speedswitching Characteristics required such as lightingsystem ,switching mode power supply.Absol

 0.133. Size:508K  winsemi
sbp13005o.pdf

13005 13005

SBP13005-OSBP13005-OSBP13005-OSBP13005-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for hig

 0.134. Size:409K  winsemi
wbp13005d1.pdf

13005 13005

WBP13005D1WBP13005D1WBP13005D1WBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diodeGeneral De

 0.135. Size:313K  winsemi
sbp13005d.pdf

13005 13005

SBP13005DSBP13005DSBP13005DSBP13005DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-in fr

 0.136. Size:314K  winsemi
sbp13005d1.pdf

13005 13005

SBP13005D1SBP13005D1SBP13005D1SBP13005D1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-i

 0.137. Size:457K  bcdsemi
apt13005t-tf.pdf

13005 13005

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005General Description FeaturesThe APT13005 series are high voltage, high speed, High Switching Speedhigh efficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficencyThe APT13005

 0.138. Size:419K  bcdsemi
apt13005si-stf-su.pdf

13005 13005

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13005SGeneral Description FeaturesThe APT13005S is a high voltage, high speed, high High Switching Speedefficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficiencyThe APT13005S

 0.139. Size:574K  feihonltd
13005d.pdf

13005 13005

13005D400V,4A,C (2)AvailableRoHS*B (1) 1 COMPLIANT1.Base 2.Collector 3.Emitter E (3)(TC=25C) 700 VVCBO - 400 VVCEO - 9 VVEBO - 4 AIC

 0.140. Size:235K  foshan
mje13005drb.pdf

13005 13005

MJE13005DRB NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25)

 0.141. Size:244K  foshan
mje13005dq3.pdf

13005 13005

MJE13005DQ3(3DD13005DQ3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P

 0.142. Size:204K  foshan
mje13005dt7.pdf

13005 13005

MJE13005DT7(3DD13005DT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

 0.143. Size:154K  foshan
mje13005t7.pdf

13005 13005

MJE13005T7(3DD13005T7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

 0.144. Size:249K  foshan
mje13005q7.pdf

13005 13005

MJE13005Q7(3DD13005Q7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 3.0 A C P

 0.145. Size:168K  foshan
mje13005vt7.pdf

13005 13005

MJE13005VT7(3DD13005VT7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V CBO V 200 V CEO V 9.0 V EBO I 8.0 A C P (Ta=2

 0.146. Size:193K  foshan
mje13005dt3.pdf

13005 13005

MJE13005DT3 (3DD13005DT3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 AB

 0.147. Size:248K  foshan
mje13005dq7.pdf

13005 13005

MJE13005DQ7(3DD13005DQ7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

 0.148. Size:239K  foshan
mje13005dq5.pdf

13005 13005

MJE13005DQ5(3DD13005DQ5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

 0.149. Size:292K  foshan
mje13005dp5.pdf

13005 13005

MJE13005DP5(3DD13005DP5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

 0.150. Size:251K  foshan
mje13005dq4.pdf

13005 13005

MJE13005DQ4(3DD13005DQ4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T

 0.151. Size:367K  kodenshi
std13005i.pdf

13005 13005

STD13005INPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching VCEO(sus)=400V C Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code EB C ESTD13005I STD13005 I-PAK I-PAK Marking Diagram STD Column 1, 2: Device Code 13005 YWW Column 3 : Pr

 0.152. Size:227K  semihow
ksh13005a.pdf

13005 13005

KSH13005AKSH13005A SEMIHOW REV.A1,Oct 2007KSH130005AKSH13005ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO-220

 0.153. Size:558K  semihow
ksd13005a.pdf

13005 13005

KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005AKSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

 0.154. Size:220K  semihow
ksg13005ar.pdf

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KSG13005AR SEMIHOW REV.A0,Feb 2009KSG13005ARKSG13005ARSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls3 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted3.8 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collec

 0.155. Size:223K  semihow
ksh13005af.pdf

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KSH13005AFKSH13005AF SEMIHOW REV.A1,Oct 2007KSH130005AFKSH13005AFSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO

 0.156. Size:558K  semihow
ksu13005a.pdf

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KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005AKSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

 0.157. Size:158K  semiwell
sbp13005s.pdf

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SemiWell Semiconductor SBP13005-S High Voltage Fast Switching NPN Power Transistor Features Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings

 0.158. Size:150K  sunroc
alj13005.pdf

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SUNROCALJ13005 TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) MAXI Parameter Value UnitsCollector-Base Voltage VCBO 700 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 9 VCollector Current IC 2.0 ACollector Power Dissipation PC 50 WJunction Temperature Tj 150 Storag Temperature -55150 Tstg ELECTRICAL CHARACTERISTICS

 0.159. Size:163K  thinkisemi
e13005-250.pdf

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E13005-250PbE13005-250Pb Free Plating ProductMJE Power TransistorProduct specificationMJE13005 seriesSilicon NPN Power TransistorDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. EAbsolute Maximum Ratings ( Ta = 25 )Parameter Value UnitlCollector-Base Voltage VCBO 70

 0.160. Size:162K  thinkisemi
e13005-225.pdf

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E13005-225PbE13005-225Pb Free Plating ProductMJE Power TransistorProduct specificationMJE13005 seriesSilicon NPN Power TransistorDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. EAbsolute Maximum Ratings ( Ta = 25 )Parameter Value UnitlCollector-Base Voltage VCBO 70

 0.161. Size:204K  thinkisemi
e13005d-213.pdf

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E13005D-213PbE13005D-213Pb Free Plating ProductMJE Power Transistor with Damping DiodeProduct specificationSilicon NPN Power Transistor MJE13005 seriesDESCRIPTIONSilicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________Absolute Maximum Ratings ( Ta = 25 )Active anti-saturation netwo

 0.162. Size:168K  wuxi china
3dd13005c7d.pdf

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NPN R 3DD13005 C7D 3DD13005 C7D NPN VCEO 400 V IC 4 A Ptot TC=25 50 W

 0.163. Size:154K  wuxi china
3dd13005grd.pdf

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NPN R 3DD13005 GRD 3DD13005 GRD NPN VCEO 400 V IC 4 A Ptot TC=25 75 W

 0.164. Size:242K  cn ween semi
phd13005.pdf

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IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where

 0.165. Size:259K  cn ween semi
phe13005.pdf

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PHE13005Silicon diffused power transistor21 January 2014 Product data sheet1. General descriptionHigh voltage, high speed NPN planar-passivated power switching transistor in a SOT78plastic package intended for use in high frequency electronic lighting ballast applications2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance3

 0.166. Size:500K  cn ween semi
phe13005x.pdf

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PHE13005XSilicon diffused power transistorRev.03 - 26 April 2018 Product data sheet1. General descriptionHigh-voltage, high-speed planar-passivated, NPN power switching transistor in SOT186A (TO-220F) plastic package for use in high frequency electronic lighting ballast applications2. Features and benefits Fast switching High voltage capability of 700 V Low thermal re

 0.167. Size:220K  inchange semiconductor
mje13005d.pdf

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Isc Silicon NPN Power Transistor MJE13005DDESCRIPTIONHigh Voltage CapabilityHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFluorescent lampElectronic ballastElectronic transformerSwitch mode power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 0.168. Size:207K  inchange semiconductor
mjf13005.pdf

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isc Silicon NPN Power Transistor MJF13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max.) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

 0.169. Size:191K  inchange semiconductor
ksh13005.pdf

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isc Silicon NPN Power Transistor KSH13005DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 0.6(Max) @ I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are pa

 0.170. Size:154K  inchange semiconductor
mje13005.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13005 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

Datasheet: WNT2F04 , WPT2F42 , WPT2N41 , WPT2F06 , WPT2E33 , WPT2F30 , WPT2N32 , WPT2N31 , BC546 , 13007 , 13009 , 13001-0 , 13001-2 , 13001-A , 13003AD , 13003B , 13005A .

 

 
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