Биполярный транзистор 13007DL - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 13007DL
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
13007DL Datasheet (PDF)
13007dl.pdf
R13007DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222
st13007d.pdf
ST13007DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARACT
stb13007dt4.pdf
STB13007DT4High voltage fast-switching NPN power transistorGeneral features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operationD2PAK Very high
st13007dfp.pdf
ST13007DFPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARA
mje13007d.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage,high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 70
cdl13007ddl.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCDL13007DTO-220Plastic PackageBuilt in DiodeABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 700 VVCEOCollector Emitter Voltage 400 VVEBOEmitter Base Voltage 9 VICCollector Current Continuous 7 ACollector Power Diss
sbp13007d.pdf
SBP13007DSBP13007DSBP13007DSBP13007DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed Minimum Lot-to-Lot h VariationFE Wide Reverse Bias SOA Built-in fr
mje13007dv7.pdf
MJE13007DV7 NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting, switching power supply applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
