13007DL Todos los transistores

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13007DL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 13007DL

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO220

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13007DL Datasheet (PDF)

1.1. 13007dl.pdf Size:115K _jdsemi

13007DL
13007DL

R 13007DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2.

4.1. sbp13007d.pdf Size:315K _update

13007DL
13007DL

SBP13007D SBP13007D SBP13007D SBP13007D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot h Variation FE ◆ Wide Reverse Bias SOA ◆ Built-in fr

4.2. mje13007dv7.pdf Size:240K _update

13007DL
13007DL

MJE13007DV7 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V V 400 CEO V 9.0 V EBO I 7 A C I 16 A CP I 4.0

 4.3. st13007dfp.pdf Size:160K _update

13007DL
13007DL

ST13007DFP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARA

4.4. stb13007dt4.pdf Size:235K _st

13007DL
13007DL

STB13007DT4 High voltage fast-switching NPN power transistor General features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode 3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operation D2PAK Very high switching speed

 4.5. st13007d.pdf Size:213K _st

13007DL
13007DL

ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACTERIZ

4.6. mje13007d.pdf Size:368K _utc

13007DL
13007DL

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications. FEATURES * VCEO(SUS) 400V * 700V

4.7. cdl13007ddl.pdf Size:218K _cdil

13007DL
13007DL

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007D TO-220 Plastic Package Built in Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 9 V IC Collector Current Continuous 7 A Collector Power Dissipa

Otros transistores... 13005ADL , 13005D , 13005DL , 13005ED , 13005F , 13005S , 13005SD , 13005SDL , BC547C , 13007S , 13007T , 13009A , 13009SDL , 13009T , 3866S , 3866SF , B647 .

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