RD667 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

September 2001 FDD6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single 64 A, 30 V RDS(ON) = 9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes S

May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate c

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

May 2005 FDD6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670AS is designed to replace a single 76 A, 30 V RDS(ON) max= 8.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 10.4 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

April 2001 FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 65 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

July 2005FDD6670A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow ga

April 2008FDD6676AS tm30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SD667LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier NPN Complementary Pair with 2SB647/A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Compl

2SD667(A)-BMCCMicro Commercial ComponentsTM2SD667(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD667(A)-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Capable of 0.9Watts of Power Dissipation.Pla

UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-AE3-R 2SD6

2SD667, 2SD667ASilicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB647/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD667, 2SD667AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD667 2SD667A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base voltage VEBO 55V

2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES AD Low Frequency Power Amplifier Complementary Pair with 2SB647A BKEFCLASSIFICATION OF hFE (1) CProduct-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 NG H1 Emitte

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667ATO-92Plastic PackageBCELow Frequency Power AmplifierComplementary CLB647/CLB647AABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL CLD667 CLD667A UNITSVCBOCollector Base Voltage 120 120 VVCEOC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SD667,2SD667A TRANSISTOR (NPN)1. EMITTERFEATURES Low Frequency Power Amplifier2. COLLECTOR Complementary Pair with 2SB647/A3. BASE Equivalent Circuit D667=Device code Solid dot = Green molding compound device, D667if none, the normal device XXX=Code

2SD667/2SD667A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.8006.200 Complementary pair with 2SB647/A 8.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.8000.9001.100Symbol Parameter Value Units 0.400VCBO Collector- Base Voltage 120 V 0.600VCEO Collector-Emitter Voltage 2SD667 8

2SD667/2SD667A TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Value Units0.55013.80014.200VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Vol

Spec. No. : HE6510HI-SINCERITYIssued Date : 1996.07.15Revised Date : 2004.08.16MICROELECTRONICS CORP.Page No. : 1/5HSD667ASILICON NPN EPITAXIALDescriptionLow Frequency Power Amplifier Complementary Pair With HSB647A.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ..................................................................................

2SD667(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(A)Complementary pair with 2SB647(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(BR3CG647L)/2SB647A(BR3CG647AL) Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). / Applications Low frequency power ampli

TRANSISTOR D667A MAIN CHARACTERISTICS FEATURES IC 600mA Epitaxial silicon VCEO 165V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power

isc N-Channel MOSFET Transistor FDD6676SFEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6670SFEATURESDrain Current : I =64A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =59m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6670ALFEATURESDrain Current : I =84A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6676FEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor FDD6672AFEATURESDrain Current : I =65A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor FDD6670AFEATURESDrain Current : I =66A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr