13003A. Аналоги и основные параметры
Наименование производителя: 13003A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1.25 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO126
Аналоги (замена) для 13003A
- подборⓘ биполярного транзистора по параметрам
13003A даташит
0.1. Size:148K philips
phe13003a.pdf 
PHE13003A NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic
0.2. Size:50K philips
phe13003au 1.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
0.3. Size:136K utc
13003ada.pdf 
UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1
0.4. Size:761K jilin sino
3dd13003a.pdf 
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003A MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (DPAK/IPAK) 10W C P (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast
0.9. Size:116K jdsemi
s13003ad 3.pdf 
R P13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
0.11. Size:115K jdsemi
s13003a-d.pdf 
R S13003A-D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Charger and Switch-mode power supplies 2
0.12. Size:114K jdsemi
h13003ah.pdf 
R H13003AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 H
0.18. Size:116K jdsemi
13003ad.pdf 
R 13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
0.19. Size:116K jdsemi
s13003ad-h.pdf 
R S13003AD-H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger and Switch-mode power supplies 2 2 2 FEATURES 2 High voltage c
0.20. Size:97K first silicon
mje13003a.pdf 
SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _
0.21. Size:273K winsemi
sbn13003a.pdf 
SBN13002D SBN13002D SBN13002D SBN13002D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol 2.Collector Very High Switching Speed High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter Built -in freewheeling diode General Description This Device is designed for high voltage, high speed switching characteristics required suc
0.22. Size:406K winsemi
sbn13003a1.pdf 
SBN13003A1 SBN13003A1 SBN13003A1 SBN13003A1 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
0.23. Size:468K winsemi
wbn13003a1.pdf 
WBN13003A1 WBN13003A1 WBN13003A1 WBN13003A1 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
0.24. Size:366K semihow
ksh13003a.pdf 
KSH13003A KSH13003A SEMIHOW REV.A1,Jan 2008 KSH130 003A KSH13003A High Voltage Switch Mode Applications gg pp High Speed Switching Suitable for Switching Regulator and Motor Control 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 30 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Bas
0.25. Size:528K semihow
ksb13003ar.pdf 
KSB13003AR KSB13003AR SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless
0.26. Size:588K semihow
ksg13003ar.pdf 
KSG13003AR SEMIHOW REV.A0,Mar 2009 KSG13003AR KSG13003AR Switch Mode series NPN silicon Power Transistor High voltage, high speed power switching 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.5 Watts TO-92L CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector 3. Base Collector-Base Voltage VCBO 700 V Collector
0.27. Size:211K semihow
ksc13003a.pdf 
KSC13003A KSC13003A SEMIHOW REV.A1,Oct 2007 KSC130 003A KSC13003A Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 20 Watts TO-1
0.28. Size:494K semihow
ksb13003a.pdf 
KSB13003A KSB13003A SEMIHOW REV.A1,Oct 2007 KSB130 003A KSB13003A High Voltage Switch Mode Application gg pp High Speed Switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitter Collector-B
0.29. Size:460K semiwell
sbr13003a.pdf 
SBR13003A SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol 2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation 1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A 3.Emitter General Description TO-126 This devices is designed for high voltage, high speed s
0.30. Size:2205K slkor
sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf 
SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25
0.31. Size:262K cn ween semi
phe13003a.pdf 
PHE13003A NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic li
0.32. Size:213K inchange semiconductor
mje13003a.pdf 
isc Silicon NPN Power Transistor MJE13003A DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.0(Max) @ I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p
Другие транзисторы: 2N5153L, 2N5154L, 2N6193U3, WT5611, WT5650, WT5651, WT5652, 13003, TIP41, 13003C, 13003D, 13003E, 13003F, 1165905, 3CA3505, 3CA2505, 3CA4505
