All Transistors. 13003A Datasheet

 

13003A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 13003A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126

 13003A Transistor Equivalent Substitute - Cross-Reference Search

   

13003A Datasheet (PDF)

 0.1. Size:148K  philips
phe13003a.pdf

13003A
13003A

PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

 0.2. Size:50K  philips
phe13003au 1.pdf

13003A
13003A

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

 0.3. Size:136K  utc
13003ada.pdf

13003A
13003A

UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1

 0.4. Size:489K  jilin sino
3dd13003a.pdf

13003A
13003A

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13003A MAIN CHARACTERISTICS Package IC 1.5A VCEO 450V PC(TO-92-FJ/TO-92-FJ-F1) 1W PC(DPAK/IPAK) 10W PC(TO-126) 20W PC(TO-220) 40W TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballasts

 0.5. Size:116K  jdsemi
h13003ad 2.pdf

13003A
13003A

RH13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.6. Size:117K  jdsemi
h13003adl.pdf

13003A
13003A

RH13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.7. Size:120K  jdsemi
s13003ad 2.pdf

13003A
13003A

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.8. Size:117K  jdsemi
h13003adl 2.pdf

13003A
13003A

RH13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.9. Size:116K  jdsemi
s13003ad 3.pdf

13003A
13003A

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.10. Size:119K  jdsemi
s13003adl.pdf

13003A
13003A

RS13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.11. Size:115K  jdsemi
s13003a-d.pdf

13003A
13003A

RS13003A-D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 2

 0.12. Size:114K  jdsemi
h13003ah.pdf

13003A
13003A

RH13003AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer aided power and Switch-mode power supplies 222FEATURES 2 H

 0.13. Size:120K  jdsemi
s13003ad 4.pdf

13003A
13003A

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.14. Size:117K  jdsemi
h13003ad.pdf

13003A
13003A

RH13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.15. Size:112K  jdsemi
s13003a 2.pdf

13003A
13003A

RS13003A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.16. Size:111K  jdsemi
s13003a.pdf

13003A
13003A

RS13003A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.17. Size:121K  jdsemi
s13003ad.pdf

13003A
13003A

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.18. Size:116K  jdsemi
13003ad.pdf

13003A
13003A

R13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.19. Size:116K  jdsemi
s13003ad-h.pdf

13003A
13003A

RS13003AD-H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Charger and Switch-mode power supplies 222FEATURES 2 High voltage c

 0.20. Size:97K  first silicon
mje13003a.pdf

13003A
13003A

SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

 0.21. Size:273K  winsemi
sbn13003a.pdf

13003A
13003A

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 0.22. Size:406K  winsemi
sbn13003a1.pdf

13003A
13003A

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 0.23. Size:468K  winsemi
wbn13003a1.pdf

13003A
13003A

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 0.24. Size:366K  semihow
ksh13003a.pdf

13003A
13003A

KSH13003AKSH13003A SEMIHOW REV.A1,Jan 2008KSH130003AKSH13003AHigh Voltage Switch Mode Applicationsgg pp High Speed Switching Suitable for Switching Regulator and Motor Control1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted30 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCollector-Bas

 0.25. Size:528K  semihow
ksb13003ar.pdf

13003A
13003A

KSB13003ARKSB13003AR SEMIHOW REV.A2,Oct 2007KSB130003ARKSB13003ARHigh Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless

 0.26. Size:588K  semihow
ksg13003ar.pdf

13003A
13003A

KSG13003AR SEMIHOW REV.A0,Mar 2009KSG13003ARKSG13003ARSwitch Mode series NPN silicon Power Transistor High voltage, high speed power switching1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.5 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collector3. BaseCollector-Base Voltage VCBO 700 VCollector

 0.27. Size:211K  semihow
ksc13003a.pdf

13003A
13003A

KSC13003AKSC13003A SEMIHOW REV.A1,Oct 2007KSC130003AKSC13003ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted20 WattsTO-1

 0.28. Size:494K  semihow
ksb13003a.pdf

13003A
13003A

KSB13003AKSB13003A SEMIHOW REV.A1,Oct 2007KSB130003AKSB13003AHigh Voltage Switch Mode Applicationgg pp High Speed Switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector3. EmitterCollector-B

 0.29. Size:460K  semiwell
sbr13003a.pdf

13003A
13003A

SBR13003ASemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-126This devices is designed for high voltage, high speed s

 0.30. Size:2205K  slkor
sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf

13003A
13003A

SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

 0.31. Size:262K  cn ween semi
phe13003a.pdf

13003A
13003A

PHE13003ANPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic li

 0.32. Size:213K  inchange semiconductor
mje13003a.pdf

13003A
13003A

isc Silicon NPN Power Transistor MJE13003ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , C945 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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