Справочник транзисторов. 13003E

 

Биполярный транзистор 13003E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 13003E
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 2.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO126

 Аналоги (замена) для 13003E

 

 

13003E Datasheet (PDF)

 0.1. Size:629K  diodes
apt13003eu.pdf

13003E
13003E

PART OBSOLETE NO ALTERNATE PART APT13003EU Green465V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 465V Case: TO126 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 1.5A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per M

 0.2. Size:312K  diodes
dxt13003ek.pdf

13003E
13003E

DXT13003EK460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 460V Case: TO252 (DPAK) BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Terminals: Finish - Ma

 0.3. Size:140K  utc
13003eda.pdf

13003E
13003E

UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1

 0.4. Size:83K  hsmc
hmje13003e.pdf

13003E
13003E

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

 0.5. Size:231K  jilin sino
3dd13003e1d.pdf

13003E
13003E

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13003E1D MAIN CHARACTERISTICS Package IC 1.5AVCEO 400VPC(TO-92) 1W APPLICATIONS Energy-saving light TO-92 Electronic ballasts High frequency switching power supply

 0.6. Size:150K  crhj
3dd13003e6d.pdf

13003E
13003E

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

 0.7. Size:427K  bcdsemi
apt13003eu-ez.pdf

13003E
13003E

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003EGeneral Description FeaturesThe APT13003E series are high voltage, high speed High Switching Speed switching NPN Power transistors specially designed High Collector-Emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. Bulk and Ammo Packing TO-92 Package andTO-12

 0.8. Size:290K  foshan
mje13003e1.pdf

13003E
13003E

MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.9. Size:611K  semihow
ksu13003er.pdf

13003E
13003E

KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M

 0.10. Size:611K  semihow
ksd13003e.pdf

13003E
13003E

KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum

 0.11. Size:611K  semihow
ksd13003er.pdf

13003E
13003E

KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M

 0.12. Size:611K  semihow
ksu13003e.pdf

13003E
13003E

KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum

 0.13. Size:323K  semihow
ksb13003er.pdf

13003E
13003E

KSB13003ERKSB13003ER SEMIHOW REV.A0,Apr 2008KSB130003ERKSB13003ERHigh Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute M

 0.14. Size:183K  wuxi china
3dd13003e1d.pdf

13003E
13003E

NPN R 3DD13003 E1D 3DD13003 E1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W

 0.15. Size:150K  wuxi china
3dd13003e6d.pdf

13003E
13003E

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

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