START499ETRNPN RF silicon transistorFeatures High efficiency High gain Linear and non linear operation Transition frequency 42 GHz Ultra miniature SOT-343 (SC70) lead free SOT-343packageApplications PA for dect or PHS PA stage for wireless LAN and Bluetooth @ 2.5 GHz UHF-VHF pre power amplifierDescriptionSTART499ETR is a product of the

START499DNPN RF silicon transistorFeatures High efficiency Common emitter configuration Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz Plastic packageSOT-89 Linear and non linear operation Supplied in tape and reel In compliance with the 2002/95/EC european Figure 1. Pin connectiondirectiveDescriptionEmitterThe START499D provi

START499NPN Silicon RF Transistor HIGH EFFICIENCY HIGH GAIN LINEAR AND NON LINEAR OPERATION TRANSITION FREQUENCY 42GHz ULTRA MINIATURE SOT343 (SC70) PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART499TR 499DESCRIPTIONSTART499 is a product of the START family thatprovide the market with a Si state-of-art RF process.Manufactured in St 3rd generation bipolar p

START405NPN Silicon RF Transistor LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V TRANSITION FREQUENCY 42GHz LOW CURRENT CONSUMPTION ULTRA MINIATURE SOT343 PACKAGE SOT343 (SC70)ORDER CODE BRANDINGSTART405TR 405DESCRIPTIONThe START405 is a member of the START familythat provide the state of the art of RF silic

START450NPN Silicon RF Transistor COMPRESSION POINT P1dB=19dBm @ 1.8GHz TRANSITION FREQUENCY 42GHz HIGH LINEARITY ULTRA MINIATURE SOT343(SC70) PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART450TR 450DESCRIPTIONThe START450 is a member of the START family thatAPPLICATIONSprovide the state of the art of RF silicon process to themarket. Manufacturated in the thi

START420NPN Silicon RF Transistor LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V ULTRA MINIATURE SOT343 PACKAGESOT343 (SC70)ORDER CODE BRANDINGSTART420TR 420DESCRIPTIONThe START420 is a member of the START familythat provide market with the state of the art of RFsilicon process. Manufacturated in the thirdAP