PNPGeneral purpose External dimensions STA (10-pin)STA421A DElectrical characteristicsAbsolute maximum ratings (Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 60 V ICBO 100 AVCB=60VVCEO 60 V IEBO 100 AVEB=6VVEBO 6V VCEO 60 V IC=25mAIC 3A hFE 40 VCE=4V, IC=1AICP 6 (PW10ms

DISCRETE SEMICONDUCTORS DATA SHEETok, halfpageM3D187PMSTA42; PMSTA43NPN high-voltage transistorsProduct data sheet 1999 May 21Supersedes data of 1997 Jun 19 NXP Semiconductors Product data sheetNPN high-voltage transistors PMSTA42; PMSTA43FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION High voltage (max. 200 V).1 base2 emitterAPPLICATIONS3 c

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D187PMSTA42; PMSTA43NPN high-voltage transistors1999 May 21Product specificationSupersedes data of 1997 Jun 19Philips Semiconductors Product specificationNPN high-voltage transistors PMSTA42; PMSTA43FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION High voltage (max. 200 V).1 base2 emitterAPPLICATION

MMSTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMSTA92) CDim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B CB 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 "Green" Device (Note 3 and 4

MCCTM Micro Commercial ComponentsMMSTA4220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Small SignalRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionTransistors Ideal for Medium Power Amplification and Swit

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMSTA42 TRANSISTOR (NPN)SOT-323 FEATURES 1. BASE High Breakdown Voltage2. EMITTER Low Collector-Emitter Saturation Voltage3. COLLECTOR Complementary to MMSTA92(PNP)MARKING:K3M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volt

MMSTA42TRANSISTOR(NPN)SOT-323 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V I

MMSTA42SOT-323 Transistor (NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMSTA92(PNP) MARKING:K3M MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Volt

SMD Type TransistorsNPN TransistorsMMSTA42 (KMSTA42) Features High Breakdown Voltage Low Collector-Emitter Saturation Voltage Complementary to MMSTA921.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltage VEBO 5 Colle

RoHS RoHSCOMPLIANT COMPLIANTMMSTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammabili