2SD2625Z9 - описание и поиск аналогов

2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

Ordering number ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0

Ordering number ENN6500A 2SD2624 NPN Triple Diffused Planar Silicon Transistor 2SD2624 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2624] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

Ordering number ENN6352 NPN Triple Diffused Planar Silicon Transistor 2SD2629 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079C High reliability (Adoption of HVP process). [2SD2629] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0.7 0.75

Ordering number ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9 1.

Transistors 2SD2620J Silicon NPN epitaxial planer type Unit mm For low-frequency amplification 1.60+0.05 0.03 0.12+0.03 0.01 1.00 0.05 3 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 1 2 High emitter to base voltage VBEO 0.27 0.02 (0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2

Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1 2 (0.65) (0.65) Absolute Maximum Ratings Ta = 25 C 1.3 0.1 Parameter Symbol Rating Unit 2

Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 Absolute Maximum Ratings Ta