Биполярный транзистор 2SD667L-D - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD667L-D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 12 pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: TO92L
Аналоги (замена) для 2SD667L-D
2SD667L-D Datasheet (PDF)
2sd667l.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SD667LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier NPN Complementary Pair with 2SB647/A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Compl
2sd667a-b-c-d 2sd667-b-c-d.pdf
2SD667(A)-BMCCMicro Commercial ComponentsTM2SD667(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD667(A)-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Capable of 0.9Watts of Power Dissipation.Pla
2sd667.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-AE3-R 2SD6
2sd667.pdf
2SD667, 2SD667ASilicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB647/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD667, 2SD667AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD667 2SD667A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base voltage VEBO 55V
2sd667a.pdf
2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES AD Low Frequency Power Amplifier Complementary Pair with 2SB647A BKEFCLASSIFICATION OF hFE (1) CProduct-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 NG H1 Emitte
2sd667 2sd667a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SD667,2SD667A TRANSISTOR (NPN)1. EMITTERFEATURES Low Frequency Power Amplifier2. COLLECTOR Complementary Pair with 2SB647/A3. BASE Equivalent Circuit D667=Device code Solid dot = Green molding compound device, D667if none, the normal device XXX=Code
2sd667-2sd667a to-92mod.pdf
2SD667/2SD667A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.8006.200 Complementary pair with 2SB647/A 8.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.8000.9001.100Symbol Parameter Value Units 0.400VCBO Collector- Base Voltage 120 V 0.600VCEO Collector-Emitter Voltage 2SD667 8
2sd667-2sd667a to-92l.pdf
2SD667/2SD667A TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Value Units0.55013.80014.200VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Vol
2sd667 2sd667a.pdf
2SD667(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(A)Complementary pair with 2SB647(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
2sd667a.pdf
2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(BR3CG647L)/2SB647A(BR3CG647AL) Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). / Applications Low frequency power ampli
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050