Справочник транзисторов. PZT3904T1G

 

Биполярный транзистор PZT3904T1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PZT3904T1G
   Маркировка: 1AM
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 5 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT223

 Аналоги (замена) для PZT3904T1G

 

 

PZT3904T1G Datasheet (PDF)

 ..1. Size:142K  onsemi
pzt3904t1g.pdf

PZT3904T1G
PZT3904T1G

PZT3904T1GGeneral Purpose TransistorNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR2, 4 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit3EMITTERCollector-E

 5.1. Size:123K  onsemi
pzt3904t1.pdf

PZT3904T1G
PZT3904T1G

PZT3904T1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantMAXIMUM RATINGSCOLLECTOR2, 4Rating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1Collector-Base Voltage VCBO 60 VdcBASEEmitter-Base Voltage VEBO 6.0 Vdc3Collector Current - Continuous IC 200 mAdcEMITTERTH

 7.1. Size:53K  philips
pzt3904 3.pdf

PZT3904T1G
PZT3904T1G

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT3904NPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 Jul 04Philips Semiconductors Product specificationNPN switching transistor PZT3904FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter

 7.2. Size:46K  st
pzt3904.pdf

PZT3904T1G
PZT3904T1G

PZT3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingPZT3904 3904 SILICON EPITAXIAL PLANAR NPNTRANSISTOR SOT-223 PLASTIC PACKAGE FOR2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE PNP COMPLEMENTARY TYPE IS2PZT39061APPLICATIONS SOT-223 WELL SUITABLE FOR SMD MOTHERBOARD ASSEMBLY SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURAT

 7.3. Size:111K  fairchild semi
2n3904 mmbt3904 pzt3904.pdf

PZT3904T1G
PZT3904T1G

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

 7.4. Size:478K  onsemi
2n3904bu 2n3904ta 2n3904tar 2n3904tf 2n3904tfr mmbt3904 pzt3904.pdf

PZT3904T1G
PZT3904T1G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.5. Size:474K  onsemi
2n3904 mmbt3904 pzt3904.pdf

PZT3904T1G
PZT3904T1G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.6. Size:182K  secos
pzt3904.pdf

PZT3904T1G
PZT3904T1G

PZT3904NPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-223 C 1. BASE2. COLLECTORFEATURES 3. EMITTERE CPower dissipationB PCM : 1 W Tamb=25 Collector currentICM : 0.2 A Collector-base voltage V(BR)CBO : 6 0 V Operating and storage junctio

 7.7. Size:1144K  jiangsu
pzt3904.pdf

PZT3904T1G
PZT3904T1G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT3904 TRANSISTOR (NPN) SOT-223 FEATURES Low Voltage and Low Current Complementary to PZT3906 1. BASE General Purpose Amplifier and Switch Application 2. COLLECTOR MARKING: 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V

 7.8. Size:674K  kexin
pzt3904.pdf

PZT3904T1G
PZT3904T1G

SMD Type TransistorsNPN TransistorsPZT3904 (KZT3904)Unit:mmSOT-2236.500.23.000.1 Features4 Low Voltage and Low Current General Purpose Amplifier and Switch Application Complementary to PZT39061 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Sy

 7.9. Size:395K  cn shikues
pzt3904.pdf

PZT3904T1G
PZT3904T1G

PZT3904Siliccon NPN bipolar Transistor Appplications: general amp plify switching aapplication. Pin assignmennt PIN NUMBER PIN NAMEE FUUNCTION SOTT-223 BASE B 1 COOLLECTOR C 2 EEMITTER E 3 Abs ings TA=25 Unless Otherwsolute Maximum Rati wise noted PARAMETER SYMBLE MAXIM UR E MUM VALUE UNIT Coll breakdown vo VCBO 60 V lect

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