CXT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage: 250VSOT-89 CASE Low

CXT5551HCwww.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBERSOT-89 CASEMAXIMUM RAT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L CXT5551 TRANSISTOR (NPN) FEATURES 1 Switching and amplification in high voltage 1. BASE Applications such as telephony 2. COLLECTOR Low current(max. 600mA) 3. EMITTER High voltage(max.180V) Marking: 1G6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) S

CXT5551TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage 1 Applications such as telephony 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking: 1G6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

CXT5551 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 3. EMITTER SOT-894.6B4.41.61.81.41.4Features2.64.25 Switching and amplification in high voltage 2.43.75Applications such as telephony 0.8MINLow current(max. 600mA) 0.530.400.480.442x)0.13 B0.35 High voltage(max.180v) 0.37 1.53.0Marking: 1G6 Dimensions in inches and (mil

SMD Type TransistorsNPN TransistorsCXT5551 (KXT5551)Features 1.70 0.1High current (max. 600mA).Low voltage (max. 160 V). Comlementary to CXT54010.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

CXT5551Plastic-Encapsulate TransistorsFeaturesC Switching and amplification in high voltageApplications such as telephony Low current(max. 600mA) High voltage(max.180V)ECBSOT-89-3L top view Schematic diagramApplicationC High voltage amplifier application1G6C EBMarking and pin assignment Maximum Ratings(Ta=25 unless otherwise noted)Symbol Pa

CXT5551NPN Silicon General Purpose Transistors FeaturesSOT-89-3L NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 1.70 0.1Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, SOT-89-3L Terminals : Solder plated, solderable per0.42 0.10.46 0.