All Transistors. CXT5551E Datasheet

 

CXT5551E Transistor. Datasheet pdf. Equivalent

Type Designator: CXT5551E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 220 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

CXT5551E Transistor Equivalent Substitute - Cross-Reference Search

CXT5551E Datasheet (PDF)

1.1. cxt5551e.pdf Size:290K _central

CXT5551E
CXT5551E

CXT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: • High Collector Breakdown Voltage: 250V SOT-89 CASE • Low

3.1. cxt5551hc.pdf Size:283K _central

CXT5551E
CXT5551E

CXT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RAT

3.2. cxt5551.pdf Size:731K _htsemi

CXT5551E
CXT5551E

CXT5551 TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage 1 Applications such as telephony 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking: 1G6 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEB

3.3. cxt5551.pdf Size:248K _lge

CXT5551E
CXT5551E

CXT5551 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 Switching and amplification in high voltage 2.4 3.75 Applications such as telephony 0.8 MIN Low current(max. 600mA) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 High voltage(max.180v) 0.37 1.5 3.0 Marking: 1G6 Dimensions in inches and (millim

3.4. cxt5551.pdf Size:1000K _kexin

CXT5551E
CXT5551E

SMD Type Transistors NPN Transistors CXT5551 (KXT5551) Features 1.70 0.1 High current (max. 600mA). Low voltage (max. 160 V). ● Comlementary to CXT5401 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

Datasheet: CSA1162 , CSC2712 , CXT3090L , CXT3150 , CXT3410 , CXT3820 , CXT491E , CXT5401E , AC125 , CXT5551HC , CXT591E , CXT7090L , CXT7410 , CXT7820 , RN2609 , CTLM3410-M832D , CTLM3474-M832D .

 


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