EMB10 / UMB10N / IMB10AEMB10FHA / UMB10NFHA / IMB10AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N EMB10FHA UMB10NFHAR247kW (SC-107C) SOT-353 (

TransistorsGeneral purpose(dual digital transistors)UMB10N / IMB10AFFeatures FExternal dimensions (Units: mm)1) Two DTA123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP

EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit : mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interference. Each l

CHENMKO ENTERPRISE CO.,LTDCHIMB10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturati