All Transistors. IMB10AFRA Datasheet

 

IMB10AFRA Datasheet, Equivalent, Cross Reference Search


   Type Designator: IMB10AFRA
   SMD Transistor Code: B10
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC74

 IMB10AFRA Transistor Equivalent Substitute - Cross-Reference Search

   

IMB10AFRA Datasheet (PDF)

 ..1. Size:1355K  rohm
emb10fha umb10nfha imb10afra.pdf

IMB10AFRA
IMB10AFRA

EMB10 / UMB10N / IMB10AEMB10FHA / UMB10NFHA / IMB10AFRADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCC-50V (4) (4) (1) (1) (2) (2) IC(MAX.)-100mA (3) (3) R12.2kWEMB10 UMB10N EMB10FHA UMB10NFHAR247kW (SC-107C) SOT-353 (

 8.1. Size:62K  rohm
umb10n imb10a b10 sot23-6 sot363.pdf

IMB10AFRA
IMB10AFRA

TransistorsGeneral purpose(dual digital transistors)UMB10N / IMB10AFFeatures FExternal dimensions (Units: mm)1) Two DTA123J chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typePNP

 8.2. Size:118K  rohm
emb10 umb10n imb10a umb10n.pdf

IMB10AFRA
IMB10AFRA

EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit : mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10package. (6) (5) (4)2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interference. Each l

 9.1. Size:179K  chenmko
chimb10gp.pdf

IMB10AFRA
IMB10AFRA

CHENMKO ENTERPRISE CO.,LTDCHIMB10GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74/SOT-457)SC-74/SOT-457* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4)* High saturati

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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