Справочник транзисторов. INC6006AS1

 

Биполярный транзистор INC6006AS1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: INC6006AS1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 1.7 pf
   Статический коэффициент передачи тока (hfe): 72
   Корпус транзистора: SC72

 Аналоги (замена) для INC6006AS1

 

 

INC6006AS1 Datasheet (PDF)

 ..1. Size:143K  isahaya
inc6006as1.pdf

INC6006AS1
INC6006AS1

PRELIMINARY INC6006AS1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi

 6.1. Size:148K  isahaya
inc6006ap1.pdf

INC6006AS1
INC6006AS1

INC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE(sat) = 0.2V(MAX) Complementary

 6.2. Size:156K  isahaya
inc6006ac1.pdf

INC6006AS1
INC6006AS1

INC6006AC1 PRELIMINARY NoticeThis is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE

 8.1. Size:142K  isahaya
inc6002ac1.pdf

INC6006AS1
INC6006AS1

INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unitmm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1)FEATURE Super mini package for easy mounting. (3) (2)Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching

 8.2. Size:106K  isahaya
inc6008ac1.pdf

INC6006AS1
INC6006AS1

INC6008AC1PRELIMINARY NoticeThis is not a final specification FOR HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini pack

 8.3. Size:134K  isahaya
inc6008ap1.pdf

INC6006AS1
INC6006AS1

PRELIMINARY INC6008AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT 4.6 MAX INC6008AP1 is a silicon NPN transistor. 1.51.6It is designed with high voltage. FEATURE Small package for easy mounting

 8.4. Size:112K  isahaya
inc6007ap1.pdf

INC6006AS1
INC6006AS1

PRELIMINARY INC6007AP1 NoticeThis is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6007AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting.

 8.5. Size:107K  isahaya
inc6001ac1.pdf

INC6006AS1
INC6006AS1

 8.6. Size:132K  isahaya
inc6005ac1.pdf

INC6006AS1
INC6006AS1

INC6005AC1FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Super mini package for easy mounting High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE

 8.7. Size:134K  isahaya
inc6005ap1.pdf

INC6006AS1
INC6006AS1

INC6005AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6005AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. CE BHigh voltage VCEO = 400V 0.53 0.4MAX0.48 MAX1.53.0APPLICATION

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History: 2SC1523

 

 
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