INC6006AS1 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

INC6006AS1 Datasheet. Specs and Replacement

Type Designator: INC6006AS1 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 72

Noise Figure, dB: -

Package: SC72

INC6006AS1 Substitution

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INC6006AS1 datasheet

..1. Size:143K isahaya

inc6006as1.pdf pdf_icon

PRELIMINARY INC6006AS1 Notice This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT INC6006AS1 is a silicon NPN transistor. 4.0 It is designed with high voltage. FEATURE Small package for easy mounting. 0.1 Hi... See More ⇒

6.1. Size:148K isahaya

inc6006ap1.pdf pdf_icon

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6.2. Size:156K isahaya

inc6006ac1.pdf pdf_icon

INC6006AC1 PRELIMINARY Notice This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCE... See More ⇒

8.1. Size:142K isahaya

inc6002ac1.pdf pdf_icon

INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit mm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1) FEATURE Super mini package for easy mounting. (3) (2) Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching ... See More ⇒