Биполярный транзистор KTA1267-O - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTA1267-O
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO92S
Аналоги (замена) для KTA1267-O
KTA1267-O Datasheet (PDF)
kta1267-gr-o-y.pdf
MCCKTA1267-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTA1267-YMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTA1267-GRFax: (818) 701-4939Features Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)PNP General Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199Purpose Application Marking: A1267 Epox
kta1267.pdf
SEMICONDUCTOR KTA1267TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION SWITCHING APPLICATION.BFEATURESExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAXLow Noise : NF=1dB(Typ.), 10dB(Max.).HM B 4.30 MAXC 0.55 MAXComplementary to KTC3199._D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60
kta1266.pdf
SEMICONDUCTOR KTA1266TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTC3198. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollecto
kta1266a.pdf
SEMICONDUCTOR KTA1266ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTC3198A. C 3.70 MAXDD 0.45E
kta1268.pdf
SEMICONDUCTOR KTA1268TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.HIGH VOLTAGE APPLICATION.FEATURES Low Noise. : NF=3dB(Typ.), Rg=100, VCE=-6V, IC=-100A, f=1kHz: NF=0.5dB(Typ.), Rg=1k, VCE=-6V, IC=-100A, f=1kHz.High DC Current Gain : hFE=200700.High Voltage : VCEO=-120V.Low Pulse Noise. Low 1/f Noise. Complementar
kta1266.pdf
KTA1266(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Co
kta1266.pdf
KTA1266WEITRONPNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : Excellent hFE LinearityTO-92 Low noiseMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.1
kta1266.pdf
KTA1266 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, KTC3198 Excellent hFE linearity, low noise, complementary pair with KTC3198. / Applications General purpose and switchi
kta1268.pdf
KTA1268 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features h , FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci
kta1266.pdf
DIP Type TransistorsPNP TransistorsKTA1266Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise Complementary to KTC31980.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050