All Transistors. KTA1267-O Datasheet

 

KTA1267-O Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTA1267-O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92S

 KTA1267-O Transistor Equivalent Substitute - Cross-Reference Search

   

KTA1267-O Datasheet (PDF)

 6.1. Size:329K  mcc
kta1267-gr-o-y.pdf

KTA1267-O
KTA1267-O

MCCKTA1267-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTA1267-YMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTA1267-GRFax: (818) 701-4939Features Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)PNP General Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199Purpose Application Marking: A1267 Epox

 7.1. Size:592K  kec
kta1267.pdf

KTA1267-O
KTA1267-O

SEMICONDUCTOR KTA1267TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION SWITCHING APPLICATION.BFEATURESExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAXLow Noise : NF=1dB(Typ.), 10dB(Max.).HM B 4.30 MAXC 0.55 MAXComplementary to KTC3199._D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60

 8.1. Size:635K  kec
kta1266.pdf

KTA1267-O
KTA1267-O

SEMICONDUCTOR KTA1266TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTC3198. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -50 VCollecto

 8.2. Size:51K  kec
kta1266a.pdf

KTA1267-O
KTA1267-O

SEMICONDUCTOR KTA1266ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTC3198A. C 3.70 MAXDD 0.45E

 8.3. Size:619K  kec
kta1268.pdf

KTA1267-O
KTA1267-O

SEMICONDUCTOR KTA1268TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORLOW NOISE AMPLIFIER APPLICATION.HIGH VOLTAGE APPLICATION.FEATURES Low Noise. : NF=3dB(Typ.), Rg=100, VCE=-6V, IC=-100A, f=1kHz: NF=0.5dB(Typ.), Rg=1k, VCE=-6V, IC=-100A, f=1kHz.High DC Current Gain : hFE=200700.High Voltage : VCEO=-120V.Low Pulse Noise. Low 1/f Noise. Complementar

 8.4. Size:245K  lge
kta1266.pdf

KTA1267-O
KTA1267-O

KTA1266(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Co

 8.5. Size:210K  wietron
kta1266.pdf

KTA1267-O
KTA1267-O

KTA1266WEITRONPNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : Excellent hFE LinearityTO-92 Low noiseMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitsCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.1

 8.6. Size:1405K  blue-rocket-elect
kta1266.pdf

KTA1267-O
KTA1267-O

KTA1266 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, KTC3198 Excellent hFE linearity, low noise, complementary pair with KTC3198. / Applications General purpose and switchi

 8.7. Size:711K  blue-rocket-elect
kta1268.pdf

KTA1267-O
KTA1267-O

KTA1268 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features h , FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

 8.8. Size:1113K  kexin
kta1266.pdf

KTA1267-O
KTA1267-O

DIP Type TransistorsPNP TransistorsKTA1266Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise Complementary to KTC31980.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top