TPCP8902 datasheet, аналоги, основные параметры
Наименование производителя: TPCP8902 📄📄
Маркировка: 8902
Тип материала: Si
Полярность: NPN*PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.52 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 14 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: PS8
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Аналоги (замена) для TPCP8902
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TPCP8902 даташит
tpcp8902 .pdf
TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4 B 0.05 M B Low collector-emitter satura
tpcp8902.pdf
TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.2 A) NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4 B 0.05 M B Low collector-emitter satura
tpcp8901.pdf
TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.1 A) NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation PNP VCE (sat) =
tpcp8901 .pdf
TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package High DC current gain PNP hFE = 200 to 500 (IC = -0.1 A) NPN hFE = 400 to 1000 (IC = 0.1 A) 0.475 1 4 B 0.05 M B Low collector-emitter satur
tpcp8404.pdf
TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO /U-MOS ) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 Low drain-source ON-resistance P Channel RDS (ON) = 38 m (typ.) 0.05 M A 8 5 (VGS=-10V) N Channel RDS (ON) = 38 m (typ.) VGS=10V) High forward transfer admittance P Channel Yfs
tpcp8603.pdf
TPCP8603 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8603 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 Strobe Applications High DC current gain hFE = 120 300 (IC = -0.1 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) 0.475 1 4 B 0.05 M B 0.65 High-speed switching tf = 120 ns (typ.) 2.9
tpcp8204.pdf
TPCP8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit mm Small footprint due to small and thin package 0.33 0.05 Low drain-source ON resistance RDS (ON) = 38 m (typ.) M A 0.05 8 5 VGS=10V High forward transfer admittance Yfs = 8 S (typ.) Low leakage
tpcp8604.pdf
TPCP8604 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type TPCP8604 High-Voltage Switching Applications Unit mm 0.33 0.05 High breakdown voltage VCEO = -400 V 0.05 M A 8 5 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 0.475 1 4 B Collector-base voltage VCBO -400 V 0.05 M B 0.65 Collector-emitter voltage VCEO -400 V 2.9 0.1 A Emitte
tpcp8g01 .pdf
TPCP8G01 TOSHIBA Multi-Chip Device Transistor Silicon PNP Epitaxial Type Field Effect Transistor Silicon P Channel MOS Type TPCP8G01 Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Multi-chip discrete device PNP Transistor and Channel MOS FET Small footprint due to small and thin package Absolute Maximum Ratings (Ta = 25 C) 0.475 1 4 B 0.05 M
tpcp8004.pdf
TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8004 Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance
tpcp8102.pdf
TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 13.5 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current
tpcp8111.pdf
TPCP8111 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8111 TPCP8111 TPCP8111 TPCP8111 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 5.2 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -10 V)
tpcp8013.pdf
TPCP8013 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8013 TPCP8013 TPCP8013 TPCP8013 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.5 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 41.5 m (typ.) (VGS = 10 V
tpcp8j01.pdf
TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 Lead(Pb)-Free 0.05 M A 8 5 Small mounting area due to small and thin package Low drain-source ON resistance P Channel RDS (ON) = 27 m (typ.) High forward transfer admitt
tpcp8305.pdf
TPCP8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8305 TPCP8305 TPCP8305 TPCP8305 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VG
tpcp8109.pdf
TPCP8109 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8109 TPCP8109 TPCP8109 TPCP8109 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 5.8 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 40.3 m (typ.) (VGS = -10 V
tpcp8006.pdf
TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance RDS (ON) = 6.5 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage curr
tpcp8302.pdf
TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8302 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance Yfs
tpcp8303.pdf
TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Low drain-source ON-resistance RDS(ON) = 41 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) 0.475 1 4 Low leakage current IDSS = -10
tpcp8405.pdf
TPCP8405 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS -H) TPCP8405 TPCP8405 TPCP8405 TPCP8405 1. Applications 1. Applications 1. Applications 1. Applications Cell Phones Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)
tpcp8j01 .pdf
TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 Lead(Pb)-Free 0.05 M A 8 5 Small mounting area due to small and thin package Low drain-source ON resistance P Channel RDS (ON) = 27 m (typ.) High forward transfer admit
tpcp8010.pdf
TPCP8010 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8010 TPCP8010 TPCP8010 TPCP8010 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.9 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 19.1 m (typ.) (VGS = 10 V
tpcp8a05-h.pdf
TPCP8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCP8A05-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm 0.33 0.05 Portable Equipment Applications 0.05 M A 8 5 Built-in a Schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching 0.475
tpcp8207.pdf
TPCP8207 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8207 TPCP8207 TPCP8207 TPCP8207 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Small gate charge QSW = 4.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) =
tpcp8003-h.pdf
TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.33 0.05 0.05 M A 8 5 Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B 0.05 M B 0.65 Small gate charge
tpcp8501.pdf
TPCP8501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8501 Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 100 to 300 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 100 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolute Maximum Ratings (Ta =
tpcp8403.pdf
TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans
tpcp8407.pdf
TPCP8407 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 TPCP8407 TPCP8407 TPCP8407 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET QSW = 4.7 nC (typ.) P-channel MOSFET QSW = 5.5 nC (typ.) (3) Lo
tpcp8510.pdf
TPCP8510 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 Unit mm High-Speed, High-Voltage Switching Applications 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 High DC current gain hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) 0.475 1 4 High-speed switching tf = 0.2 s (typ) B 0.05 M B 0.65 2.9 0.1
tpcp8105.pdf
TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8105 TPCP8105 TPCP8105 TPCP8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.8 m (typ.) (VGS = -4.5
tpcp8103-h.pdf
TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.33 0.05 0.05 M A 8 5 Portable Equipment Applications CCFL Inverter Applications 0.475 1 4 B Small footprint due to a small and thin package 0.05 M B 0.65 2.9 0.1 High spe
tpcp8301.pdf
TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8301 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.33 0.05 Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) High forward transfer admittan
tpcp8f01.pdf
TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit mm Swtching Applications 0.33 0.05 0.05 M A Load Switch Applications 8 5 Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive 0.475 1 4 B 0.05 M B High DC current gain hFE = 20
tpcp8511.pdf
TPCP8511 Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 TPCP8511 TPCP8511 TPCP8511 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters Photo Flashes 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation VCE(sat) = 0.18 V
tpcp8106.pdf
TPCP8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8106 TPCP8106 TPCP8106 TPCP8106 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
tpcp8005-h.pdf
TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications 0.33 0.05 0.05 M A Portable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4 B 0.05 M B 0.65 Small gate charge QSW = 5.0 nC (typ.
tpcp8107.pdf
TPCP8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8107 TPCP8107 TPCP8107 TPCP8107 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 14.0 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 13.9 m (typ.) (VGS = -10
tpcp8201.pdf
TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4 B 0.05 M B 0.65 Yfs = 7.0 S
tpcp8505.pdf
TPCP8505 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) TPCP8505 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 Absolu
tpcp8401.pdf
TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS / -MOS ) TPCP8401 Switching Regulator Applications Load Switch Applications Unit mm 0.33 0.05 Lead(Pb)-Free 0.05 M A 8 5 Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin pack
tpcp8406.pdf
TPCP8406 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS -H) TPCP8406 TPCP8406 TPCP8406 TPCP8406 1. Applications 1. Applications 1. Applications 1. Applications Cell Phones Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)
tpcp8507.pdf
TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit mm DC/DC Converters 0.33 0.05 0.05 M A 8 5 High DC current gain hFE = 120 300 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.14 V (max) High-speed switching tf = 0.2 s (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 Absolute Maximum
tpcp8601.pdf
TPCP8601 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Strobo Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.6 A) Low collector-emitter saturation VCE (sat) = -0.19 V (max) 0.475 1 4 B High-speed switching tf = 35 ns (typ.
tpcp8h02.pdf
TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.33 0.05 0.05 M A STROBE FLASH APPLICATIONS 8 5 HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 0.475 1 4 B Multi-chip discrete device; built-in NPN transistor for main switch and 0.05 M B 0.65 N-ch MOS FET for drive 2.9
tpcp8203.pdf
TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC/DC Converters 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance
tpcp8701.pdf
TPCP8701 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Inverter Lighting Applications Small footprint due to small and thin package High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.14 V (max) 0.475 1 4 B 0.05
tpcp8007-h.pdf
TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCP8007-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 2.7 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.)
tpcp8002.pdf
TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 Lead (Pb)-Free 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7 m (typ.) High forward transfer admittance 0.475 1 4 B Yfs = 36 S
tpcp8011.pdf
TPCP8011 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8011 TPCP8011 TPCP8011 TPCP8011 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 25.5 m (typ.) (VGS = 10 V
tpcp8205-h.pdf
TPCP8205-H MOSFETs Silicon N-Channel MOS (U-MOS ) TPCP8205-H TPCP8205-H TPCP8205-H TPCP8205-H 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance RDS(ON) = 20 m
tpcp8g01.pdf
TPCP8G01 TOSHIBA Multi-Chip Device Transistor Silicon PNP Epitaxial Type Field Effect Transistor Silicon P Channel MOS Type TPCP8G01 Unit mm Switching Applications 0.33 0.05 0.05 M A 8 5 Multi-chip discrete device PNP Transistor and Channel MOS FET Small footprint due to small and thin package Absolute Maximum Ratings (Ta = 25 C) 0.475 1 4 B 0.05 M
tpcp8504.pdf
TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 5 8 High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 0.475 1 4 B 0.05 M B 0.65 2.9 0.1 A 0
tpcp8110.pdf
TPCP8110 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8110 TPCP8110 TPCP8110 TPCP8110 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 14 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 30.4 m (typ.) (VGS = -10 V)
tpcp8602.pdf
TPCP8602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 High-Speed Switching Applications Unit mm DC-DC Converter Applications 0.33 0.05 0.05 M A 8 5 Strobe Flash Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation VCE (sat) = -0.2 V (max) 0.475 1 4 High-speed switching tf = 90 ns (typ.) B 0.05 M B
tpcp8009.pdf
TPCP8009 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8009 TPCP8009 TPCP8009 TPCP8009 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 9.6 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 9.5 m (typ.) (VGS = 10 V)
tpcp8008-h.pdf
TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 3.8 nC (typ.) Low drain-sour
tpcp8402.pdf
TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications Unit mm DC-DC Converter Applications Low drain-source ON resistance P Channel R = 60 m (typ.) DS (ON) N Channel R = 38 m (typ.) DS (ON) High forward transfer admittance P Channel Y = 6.0
tpcp8001-h.pdf
TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCP8001-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications 0.33 0.05 Portable Equipment Applications M +0.05 A Small footprint due to small and thin package High speed switching 0.17 0.02 B 0.33 0.05 0.05M B
tpcp8306.pdf
TPCP8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8306 TPCP8306 TPCP8306 TPCP8306 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage
tpcp8012.pdf
TPCP8012 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8012 TPCP8012 TPCP8012 TPCP8012 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 10 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 16.2 m (typ.) (VGS = 10 V)
tpcp8h01.pdf
TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS 0.33 0.05 0.05 M A 8 5 LORD SWITCHING APPLICATIONS STROBE FLASH APPLICATIONS Multi-chip discrete device; built-in NPN transistor for main switch and 0.475 1 4 B N-ch MOS FET for drive 0.05 M B 0.65 Hig
tpcp8202.pdf
TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC-DC Converters 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON-resistance RDS(ON) = 19 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) 0.475 1 4 B Low leakage current IDSS = 1
tpcp8206.pdf
TPCP8206 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCP8206 TPCP8206 TPCP8206 TPCP8206 1. Applications 1. Applications 1. Applications 1. Applications Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 4.5 V) (3) Low leakage current IDSS = 1
tpcp8101.pdf
TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance Yfs = 14 S (typ.) Low l
tpcp8404.pdf
SMD Type MOSFET Transistors Silicon P,N Channel MOSFET TPCP8404 0.33 0.05 Features 2-3V1G 0.05 M A 8 5 Low drain-source ON-resistance P Channel RDS(ON) = 38m (typ.)(VGS=-10V) N Channel RDS(ON) = 38m (typ.)(VGS=10V) High forward transfer admittance 0.475 1 4 B 0.05 M B 0.65 P Channel Yfs = 7.3S (typ.) 2.9 0.1 A N Channel Yfs = 8S (typ.) 0.8 0.05 Low leakage curr
Другие транзисторы: TPA2029NND03, TPA2030NND03, TPC2715NND03, TPC5658NND03, TPC5663NND03, TPC6901, TPC6901A, TPC6902, 2SA1837, TPCP8F01, TPCP8G01, KTC3875-GR, KTC3875LT1, KTC3875-Y, KTC3876-GR, KTC3876-Y, KTC4075-BL
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