TP3020A PCB24

STP3020LN - CHANNEL 30V - 0.019 - 40A - TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP3020L 30 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3024B/DThe RF LineUHF Linear Power TransistorTP3024BThe TP3024B is a balanced transistor designed specifically for use in cellularradio systems. This device permits the design of a Class AB pushpull, highgain, broadband amplifier having a high degree of linearity without the need forcomplicated biasing circuitry.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3021/DThe RF LineUHF Power TransistorTP3021The TP3021 is designed for 24 V common emitter base station amplifiers.Operating in the 820960 MHz bandwidth, it has been specifically designed foruse in analog and digital (GSM) systems as a medium power output device. Specified 24 Volts, 960 MHz CharacteristicsOut

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3022B/DThe RF LineUHF Power TransistorTP3022BThe TP3022B is designed for commonemitter operation in the 900 MHzmobile radio band. Use of gold metallization and silicon diffused ballastresistors results in a medium power output/driver transistor with stateoftheart ruggedness and reliability. Specifie

ATP302Ordering number : ENA1654ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP302ApplicationsFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

Ordering number : ENA1654AATP302P-Channel Power MOSFEThttp://onsemi.com 60V, 70A, 13m , ATPAKFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-t