TP3020A
Datasheet, Equivalent, Cross Reference Search
Type Designator: TP3020A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8.75
W
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 3.5
V
Maximum Collector Current |Ic max|: 0.3
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 2000
MHz
Collector Capacitance (Cc): 5
pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: 244-04
TP3020A
Transistor Equivalent Substitute - Cross-Reference Search
TP3020A
Datasheet (PDF)
8.1. Size:280K st
stp3020l.pdf
STP3020LN - CHANNEL 30V - 0.019 - 40A - TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP3020L 30 V
9.1. Size:50K motorola
tp3024br.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3024B/DThe RF LineUHF Linear Power TransistorTP3024BThe TP3024B is a balanced transistor designed specifically for use in cellularradio systems. This device permits the design of a Class AB pushpull, highgain, broadband amplifier having a high degree of linearity without the need forcomplicated biasing circuitry.
9.2. Size:93K motorola
tp3021re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3021/DThe RF LineUHF Power TransistorTP3021The TP3021 is designed for 24 V common emitter base station amplifiers.Operating in the 820960 MHz bandwidth, it has been specifically designed foruse in analog and digital (GSM) systems as a medium power output device. Specified 24 Volts, 960 MHz CharacteristicsOut
9.3. Size:51K motorola
tp3022br.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3022B/DThe RF LineUHF Power TransistorTP3022BThe TP3022B is designed for commonemitter operation in the 900 MHzmobile radio band. Use of gold metallization and silicon diffused ballastresistors results in a medium power output/driver transistor with stateoftheart ruggedness and reliability. Specifie
9.4. Size:462K sanyo
atp302.pdf
ATP302Ordering number : ENA1654ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP302ApplicationsFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai
9.5. Size:355K onsemi
atp302.pdf
Ordering number : ENA1654AATP302P-Channel Power MOSFEThttp://onsemi.com 60V, 70A, 13m , ATPAKFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-t
Datasheet: 2N3200
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