Справочник транзисторов. NSV1C301ET4G

 

Биполярный транзистор NSV1C301ET4G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSV1C301ET4G
   Маркировка: 1C31E
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 33 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 120 MHz
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO252

 Аналоги (замена) для NSV1C301ET4G

 

 

NSV1C301ET4G Datasheet (PDF)

 ..1. Size:114K  onsemi
nsv1c301et4g.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typi

 6.1. Size:286K  onsemi
nsv1c301ct.pdf

NSV1C301ET4G
NSV1C301ET4G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.1. Size:79K  onsemi
nsv1c300et4g.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typical

 9.1. Size:109K  onsemi
nsv1c200mz4t1g.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 9.2. Size:68K  onsemi
nsv1c200lt1g.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

 9.3. Size:109K  onsemi
nsv1c201mz4t1g.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 9.4. Size:198K  onsemi
nss1c200mz4 nsv1c200mz4.pdf

NSV1C301ET4G
NSV1C301ET4G

PNP Transistor, Low VCE(sat)100 V, 2.0 ANSS1C200MZ4,NSV1C200MZ4ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowwww.onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications-100 VOLTS, 2.0 AMPSwhere affordable ef

 9.5. Size:104K  onsemi
nss1c201mz4 nsv1c201mz4.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 9.6. Size:76K  onsemi
nsv1c201lt1g.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i

 9.7. Size:137K  onsemi
nss1c201l nsv1c201l.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

 9.8. Size:129K  onsemi
nss1c200l nsv1c200l.pdf

NSV1C301ET4G
NSV1C301ET4G

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

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