NSV1C301ET4G - описание и поиск аналогов

 

Аналоги NSV1C301ET4G. Основные параметры


   Наименование производителя: NSV1C301ET4G
   Маркировка: 1C31E
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 33 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 120 MHz
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO252

 Аналоги (замена) для NSV1C301ET4G

   - подбор ⓘ биполярного транзистора по параметрам

 

NSV1C301ET4G даташит

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NSV1C301ET4G

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typi

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NSV1C301ET4G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.1. Size:79K  onsemi
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NSV1C301ET4G

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical

 9.1. Size:109K  onsemi
nsv1c200mz4t1g.pdfpdf_icon

NSV1C301ET4G

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont

Другие транзисторы... NSS12201LT1G , NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G , NSV1C200MZ4T1G , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , TIP32C , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , NJV4031NT3G .

History: BF394C

 

 
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