Аналоги NSV1C301ET4G. Основные параметры
Наименование производителя: NSV1C301ET4G
Маркировка: 1C31E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 33 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO252
Аналоги (замена) для NSV1C301ET4G
NSV1C301ET4G даташит
nsv1c301et4g.pdf
NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typi
nsv1c301ct.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
nsv1c300et4g.pdf
NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical
nsv1c200mz4t1g.pdf
NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont
Другие транзисторы... NSS12201LT1G , NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G , NSV1C200MZ4T1G , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , TIP32C , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , NJV4031NT3G .
History: BF394C
History: BF394C
Список транзисторов
Обновления
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