NSV1C301ET4G Datasheet. Specs and Replacement

Type Designator: NSV1C301ET4G  📄📄 

SMD Transistor Code: 1C31E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 33 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO252

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NSV1C301ET4G datasheet

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NSV1C301ET4G

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typi... See More ⇒

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NSV1C301ET4G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒

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NSV1C301ET4G

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical... See More ⇒

 9.1. Size:109K  onsemi

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NSV1C301ET4G

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont... See More ⇒

Detailed specifications: NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G, NSV1C200LT1G, NSV1C200MZ4T1G, NSV1C201LT1G, NSV1C201MZ4T1G, NSV1C300ET4G, TIP32C, NSV20101JT1G, NSV20200LT1G, NSV20201LT1G, NSV2029M3T5G, NJV4030PT1G, NJV4030PT3G, NJV4031NT1G, NJV4031NT3G

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