NJVMJD50T4G. Аналоги и основные параметры
Наименование производителя: NJVMJD50T4G
Маркировка: J50
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO252
Аналоги (замена) для NJVMJD50T4G
- подборⓘ биполярного транзистора по параметрам
NJVMJD50T4G даташит
..1. Size:79K onsemi
njvmjd47t4g njvmjd50t4g.pdf 
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 1 AMPERE (No Suffix) 250, 400 VOLTS, 15 WAT
..2. Size:157K onsemi
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf 
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications http //onsemi.com Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. NPN SILICON POWER Features TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 1 AMPERE (No Suffix) 250, 400 VOLTS, 15 WAT
8.1. Size:153K onsemi
njvmjd112 njvmjd117.pdf 
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas
8.2. Size:115K onsemi
njvmjd44e3.pdf 
MJD44E3, NJVMJD44E3T4G Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver http //onsemi.com stages in applications such as switching regulators, converters, and power amplifiers. NPN DARLINGTON SILICON Features POWER TRANSISTORS Electrically Similar to Popular D44E3 Device 10 AMPERES High DC Gain
8.3. Size:173K onsemi
njvmjd41c njvmjd42c.pdf 
MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S
8.4. Size:148K onsemi
njvmjd148.pdf 
MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @
8.7. Size:178K onsemi
njvmjd6039t4g.pdf 
MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S
8.8. Size:142K onsemi
njvmjd122 njvmjd127.pdf 
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements
8.9. Size:200K onsemi
njvmjd243 njvmjd253.pdf 
MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu
8.10. Size:172K onsemi
njvmjd340 njvmjd350.pdf 
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S
8.11. Size:175K onsemi
njvmjd128.pdf 
MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo
8.13. Size:142K onsemi
njvmjd210 mjd200.pdf 
MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES High DC Current Gain 25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix
8.14. Size:148K onsemi
njvmjd44h11 njvmjd45h11.pdf 
MJD44H11, NJVMJD44H11 (NPN) MJD45H11, NJVMJD45H11 (PNP) Complementary Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or 8 AMPERES driver stages in applications such as switching regulators, converters, 80 VOLTS, 20 WATTS and power amplifiers. Features MARKING Le
8.15. Size:132K onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf 
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm
Другие транзисторы: NJVMJD44E3T4G, NJVMJD44H11G, NJVMJD44H11RLG, NJVMJD44H11T4G, NJVMJD45H11G, NJVMJD45H11RLG, NJVMJD45H11T4G, NJVMJD47T4G, SS8050, NJVMJD6039T4G, NSBA114EDP6T5G, NSBA114EDXV6T1G, NSBA114EF3T5G, NSBA114TDP6T5G, NSBA114TDXV6T1G, NSBA114TDXV6T5G, NSBA114TF3T5G
