NJVMJD50T4G Specs and Replacement
Type Designator: NJVMJD50T4G
SMD Transistor Code: J50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO252
- BJT ⓘ Cross-Reference Search
NJVMJD50T4G datasheet
..1. Size:79K onsemi
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Detailed specifications: NJVMJD44E3T4G, NJVMJD44H11G, NJVMJD44H11RLG, NJVMJD44H11T4G, NJVMJD45H11G, NJVMJD45H11RLG, NJVMJD45H11T4G, NJVMJD47T4G, SS8050, NJVMJD6039T4G, NSBA114EDP6T5G, NSBA114EDXV6T1G, NSBA114EF3T5G, NSBA114TDP6T5G, NSBA114TDXV6T1G, NSBA114TDXV6T5G, NSBA114TF3T5G
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