NSBA114TDP6T5G. Аналоги и основные параметры
Наименование производителя: NSBA114TDP6T5G
Маркировка: T
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.27 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 160
Корпус транзистора: SOT963
Аналоги (замена) для NSBA114TDP6T5G
- подборⓘ биполярного транзистора по параметрам
NSBA114TDP6T5G даташит
nsba114tdp6t5g.pdf
NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor (3) (2) (1) contains a single transistor with a monolithic bias network consistin
nsba114tdxv6t5g.pdf
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with
nsba114tdxv6t.pdf
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network (3) (2) (1) The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digi
nsba114tf3t5g.pdf
NSBA114EF3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors;
Другие транзисторы: NJVMJD45H11RLG, NJVMJD45H11T4G, NJVMJD47T4G, NJVMJD50T4G, NJVMJD6039T4G, NSBA114EDP6T5G, NSBA114EDXV6T1G, NSBA114EF3T5G, 2SC945, NSBA114TDXV6T1G, NSBA114TDXV6T5G, NSBA114TF3T5G, NSBA114YDP6T5G, NSBA114YDXV6T1G, NSBA114YF3T5G, NST30010MXV6T1G, NST3904DP6T5G
History: 2SC703
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