Биполярный транзистор NSBA114TDP6T5G Даташит. Аналоги
Наименование производителя: NSBA114TDP6T5G
Маркировка: T
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Максимальная рассеиваемая мощность (Pc): 0.27 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT963
- подбор биполярного транзистора по параметрам
NSBA114TDP6T5G Datasheet (PDF)
nsba114tdp6t5g.pdf

NSBA114EDP6T5G SeriesPreferred DevicesDual Digital Transistors(BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistor(3) (2) (1)contains a single transistor with a monolithic bias network consistin
nsba114tdxv6t5g.pdf

MUN5115DW1,NSBA114TDXV6,NSBA114TDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with
nsba114tdxv6t.pdf

NSBA114EDXV6T1,NSBA114EDXV6T5 SERIESPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digi
nsba114tf3t5g.pdf

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC734R | D45VH4 | 2SC1830 | 2SC2714Y | BC817-40 | PBSS305ND | BDV67
History: 2SC734R | D45VH4 | 2SC1830 | 2SC2714Y | BC817-40 | PBSS305ND | BDV67



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