NSBA114TDP6T5G Specs and Replacement
Type Designator: NSBA114TDP6T5G
SMD Transistor Code: T
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT963
NSBA114TDP6T5G Substitution
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NSBA114TDP6T5G datasheet
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