NST3906DP6T5G. Аналоги и основные параметры

Наименование производителя: NST3906DP6T5G

Маркировка: F

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.42 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.2 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 250 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT963

 Аналоги (замена) для NST3906DP6T5G

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NST3906DP6T5G даташит

 ..1. Size:96K  onsemi
 nst3906dp6t5g.pdf pdf_icon

NST3906DP6T5G

NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat

 4.1. Size:96K  onsemi
 nst3906dp6.pdf pdf_icon

NST3906DP6T5G

NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat

 6.1. Size:172K  onsemi
 nst3906dxv6t1 nst3906dxv6t5.pdf pdf_icon

NST3906DP6T5G

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

 6.2. Size:96K  onsemi
 nst3906dxv6t1-5.pdf pdf_icon

NST3906DP6T5G

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power

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