NST3906DP6T5G Datasheet, Equivalent, Cross Reference Search

   Type Designator: NST3906DP6T5G
   SMD Transistor Code: F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.42 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT963

NST3906DP6T5G Transistor Equivalent Substitute - Cross-Reference Search

NST3906DP6T5G Datasheet (PDF)

..1. Size:96K onsemi
nst3906dp6t5g.pdf

NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

4.1. Size:96K onsemi
nst3906dp6.pdf

6.1. Size:172K onsemi
nst3906dxv6t1 nst3906dxv6t5.pdf

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

6.2. Size:96K onsemi
nst3906dxv6t1-5.pdf