NSBA113EDXV6. Аналоги и основные параметры

Наименование производителя: NSBA113EDXV6

Маркировка: 0G

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 1 kOhm

Встроенный резистор цепи смещения R2 = 1 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 3

Корпус транзистора: SOT563

 Аналоги (замена) для NSBA113EDXV6

- подборⓘ биполярного транзистора по параметрам

 

NSBA113EDXV6 даташит

 ..1. Size:74K  onsemi
nsba113edxv6.pdfpdf_icon

NSBA113EDXV6

MUN5130DW1, NSBA113EDXV6 Dual PNP Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R

 6.1. Size:110K  onsemi
nsba113ef3.pdfpdf_icon

NSBA113EDXV6

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 6.2. Size:450K  onsemi
mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdfpdf_icon

NSBA113EDXV6

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 8.1. Size:101K  onsemi
nsba114edxv.pdfpdf_icon

NSBA113EDXV6

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network (3) (2) (1) The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digi

Другие транзисторы: NST65010MW6T1G, NST65011M, NST65011MW6T1G, NST847BDP6T5G, NST857BDP6T5G, 3DD5011, 2SD5011, D4203D, 431, NSBA113EDXV6T1, NSBA113EDXV6T1G, NSBA113EF3, NSBA113EF3T5G, NSBA115EDXV6, NSBA115EDXV6T1G, NSBA115TDP6, NSBA115TDP6T5G