NSBA113EDXV6 Todos los transistores

 

NSBA113EDXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBA113EDXV6
   Código: 0G
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3
   Paquete / Cubierta: SOT563
     - Selección de transistores por parámetros

 

NSBA113EDXV6 Datasheet (PDF)

 ..1. Size:74K  onsemi
nsba113edxv6.pdf pdf_icon

NSBA113EDXV6

MUN5130DW1,NSBA113EDXV6Dual PNP Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR

 6.1. Size:110K  onsemi
nsba113ef3.pdf pdf_icon

NSBA113EDXV6

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 6.2. Size:450K  onsemi
mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf pdf_icon

NSBA113EDXV6

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 8.1. Size:101K  onsemi
nsba114edxv.pdf pdf_icon

NSBA113EDXV6

NSBA114EDXV6T1,NSBA114EDXV6T5 SERIESPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digi

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: L2SC2411KRLT3G | 3DG12 | 2SA1980EF | 2N6560 | CS9103 | 2SC5305LS

 

 
Back to Top

 


 
.