NSBA123EDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSBA123EDXV6T1G

Маркировка: 0H

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 2.2 kOhm

Встроенный резистор цепи смещения R2 = 2.2 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: SOT563

 Аналоги (замена) для NSBA123EDXV6T1G

- подборⓘ биполярного транзистора по параметрам

 

NSBA123EDXV6T1G даташит

 2.1. Size:112K  onsemi
 nsba123edxv6.pdf pdf_icon

NSBA123EDXV6T1G

MUN5131DW1, NSBA123EDXV6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias

 6.1. Size:109K  onsemi
 nsba123ef3.pdf pdf_icon

NSBA123EDXV6T1G

MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

 7.1. Size:94K  onsemi
 nsba123jdp6.pdf pdf_icon

NSBA123EDXV6T1G

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

 7.2. Size:117K  onsemi
 nsba123jf3.pdf pdf_icon

NSBA123EDXV6T1G

MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

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Другие транзисторы: NSBA113EF3T5G, NSBA115EDXV6, NSBA115EDXV6T1G, NSBA115TDP6, NSBA115TDP6T5G, NSBA115TF3, NSBA115TF3T5G, NSBA123EDXV6, BD222, NSBA123EF3, NSBA123EF3T5G, NSBA123JDP6, NSBA123JDP6T5G, NSBA123JDXV6, NSBA123JDXV6T5G, NSBA123JF3, NSBA123JF3T5G