All Transistors. NSBA123EDXV6T1G Datasheet

 

NSBA123EDXV6T1G Datasheet and Replacement


   Type Designator: NSBA123EDXV6T1G
   SMD Transistor Code: 0H
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SOT563
 

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NSBA123EDXV6T1G Datasheet (PDF)

 2.1. Size:112K  onsemi
nsba123edxv6.pdf pdf_icon

NSBA123EDXV6T1G

MUN5131DW1,NSBA123EDXV6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias

 6.1. Size:109K  onsemi
nsba123ef3.pdf pdf_icon

NSBA123EDXV6T1G

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 7.1. Size:94K  onsemi
nsba123jdp6.pdf pdf_icon

NSBA123EDXV6T1G

MUN5135DW1,NSBA123JDXV6,NSBA123JDP6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monol

 7.2. Size:117K  onsemi
nsba123jf3.pdf pdf_icon

NSBA123EDXV6T1G

MUN2135, MMUN2135L,MUN5135, DTA123JE,DTA123JM3, NSBA123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

Datasheet: NSBA113EF3T5G , NSBA115EDXV6 , NSBA115EDXV6T1G , NSBA115TDP6 , NSBA115TDP6T5G , NSBA115TF3 , NSBA115TF3T5G , NSBA123EDXV6 , 2SC5200 , NSBA123EF3 , NSBA123EF3T5G , NSBA123JDP6 , NSBA123JDP6T5G , NSBA123JDXV6 , NSBA123JDXV6T5G , NSBA123JF3 , NSBA123JF3T5G .

History: BC848C-AU

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