NSBC113EPDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSBC113EPDXV6T1G

Маркировка: 30

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 1 kOhm

Встроенный резистор цепи смещения R2 = 1 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 3

Корпус транзистора: SOT563

 Аналоги (замена) для NSBC113EPDXV6T1G

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NSBC113EPDXV6T1G даташит

 1.1. Size:77K  onsemi
 mun5330dw1 nsbc113epdxv6.pdf pdf_icon

NSBC113EPDXV6T1G

MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli

 1.2. Size:82K  onsemi
 nsbc113epdxv6.pdf pdf_icon

NSBC113EPDXV6T1G

MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli

 6.1. Size:110K  onsemi
 nsbc113ef3.pdf pdf_icon

NSBC113EPDXV6T1G

MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 6.2. Size:131K  onsemi
 nsbc113edxv6.pdf pdf_icon

NSBC113EPDXV6T1G

MUN5230DW1, NSBC113EDXV6 Dual NPN Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolithic b

ПОКАЗАТЬ ЕЩЁ

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