All Transistors. NSBC113EPDXV6T1G Datasheet

 

NSBC113EPDXV6T1G Datasheet and Replacement


   Type Designator: NSBC113EPDXV6T1G
   SMD Transistor Code: 30
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 1 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: SOT563
 

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NSBC113EPDXV6T1G Datasheet (PDF)

 1.1. Size:77K  onsemi
 mun5330dw1 nsbc113epdxv6.pdf pdf_icon

NSBC113EPDXV6T1G

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 1.2. Size:82K  onsemi
 nsbc113epdxv6.pdf pdf_icon

NSBC113EPDXV6T1G

MUN5330DW1,NSBC113EPDXV6Complementary BiasResistor TransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 6.1. Size:110K  onsemi
 nsbc113ef3.pdf pdf_icon

NSBC113EPDXV6T1G

MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)

 6.2. Size:131K  onsemi
 nsbc113edxv6.pdf pdf_icon

NSBC113EPDXV6T1G

MUN5230DW1,NSBC113EDXV6Dual NPN Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolithic b

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Datasheet: NSVDTC144EM3T5G , NSVDTC144TM3T5G , NSVDTC144WET1G , NSBC113EDXV6 , NSBC113EDXV6T1G , NSBC113EF3 , NSBC113EF3T5G , NSBC113EPDXV6 , BC337 , NSBC114EDP6 , NSBC114EDP6T5G , NSBC114EDXV6 , NSBC114EDXV6T1G , NSBC114EDXV6T5G , NSBC114EF3 , NSBC114EF3T5G , NSBC114EPDP6 .

History: OC204

Keywords - NSBC113EPDXV6T1G transistor datasheet

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