NSVMUN5213DW1T3G. Аналоги и основные параметры

Наименование производителя: NSVMUN5213DW1T3G

Маркировка: 7C

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 47 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT363

 Аналоги (замена) для NSVMUN5213DW1T3G

- подборⓘ биполярного транзистора по параметрам

 

NSVMUN5213DW1T3G даташит

 0.1. Size:89K  onsemi
 nsvmun5213dw1t3g.pdf pdf_icon

NSVMUN5213DW1T3G

MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

 5.1. Size:89K  onsemi
 nsvmun5215dw1t1g.pdf pdf_icon

NSVMUN5213DW1T3G

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

 5.2. Size:191K  onsemi
 nsvmun5212dw1t1g.pdf pdf_icon

NSVMUN5213DW1T3G

MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The

 5.3. Size:89K  onsemi
 nsvmun5211dw1t3g.pdf pdf_icon

NSVMUN5213DW1T3G

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSBC123TF3T5G, NSBC123TPDP6, NSBC123TPDP6T5G, NSVMUN5131T1G, NSVMUN5135DW1T1G, NSVMUN5137DW1T1G, NSVMUN5211DW1T3G, NSVMUN5212DW1T1G, D667, NSVMUN5214DW1T3G, NSVMUN5215DW1T1G, NSVMUN5233DW1T3G, NSVMUN5236T1G, NSVMUN5111DW1T3G, NSVMUN5113DW1T3G, NSVMUN5312DW1T2G, NSVMUN5312DW1T3G