All Transistors. NSVMUN5213DW1T3G Datasheet

 

NSVMUN5213DW1T3G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSVMUN5213DW1T3G
   SMD Transistor Code: 7C
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT363

 NSVMUN5213DW1T3G Transistor Equivalent Substitute - Cross-Reference Search

   

NSVMUN5213DW1T3G Datasheet (PDF)

 0.1. Size:89K  onsemi
nsvmun5213dw1t3g.pdf

NSVMUN5213DW1T3G
NSVMUN5213DW1T3G

MUN5213DW1,NSBC144EDXV6,NSBC144EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 5.1. Size:89K  onsemi
nsvmun5215dw1t1g.pdf

NSVMUN5213DW1T3G
NSVMUN5213DW1T3G

MUN5215DW1,NSBC114TDXV6,NSBC114TDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with

 5.2. Size:191K  onsemi
nsvmun5212dw1t1g.pdf

NSVMUN5213DW1T3G
NSVMUN5213DW1T3G

MUN5211DW1T1G,SMUN5211DW1T1G,NSVMUN5211DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withSOT-363a monolithic bias network consisting of two resistors; a series base CASE 419BSTYLE 1resistor and a base-emitter resistor. The

 5.3. Size:89K  onsemi
nsvmun5211dw1t3g.pdf

NSVMUN5213DW1T3G
NSVMUN5213DW1T3G

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 5.4. Size:90K  onsemi
nsvmun5214dw1t3g.pdf

NSVMUN5213DW1T3G
NSVMUN5213DW1T3G

MUN5214DW1,NSBC114YDXV6,NSBC114YDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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