NSVMUN5312DW1T2G. Аналоги и основные параметры

Наименование производителя: NSVMUN5312DW1T2G

Маркировка: 12

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 22 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 60

Корпус транзистора: SOT363

 Аналоги (замена) для NSVMUN5312DW1T2G

- подборⓘ биполярного транзистора по параметрам

 

NSVMUN5312DW1T2G даташит

 0.1. Size:110K  onsemi
 nsvmun5312dw1t3g.pdf pdf_icon

NSVMUN5312DW1T2G

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 kW, R2 = 22 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transisto

 0.2. Size:110K  onsemi
 nsvmun5312dw1t2g.pdf pdf_icon

NSVMUN5312DW1T2G

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 kW, R2 = 22 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transisto

 5.1. Size:103K  onsemi
 nsvmun5314dw1t3g.pdf pdf_icon

NSVMUN5312DW1T2G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 5.2. Size:80K  onsemi
 nsvmun5316dw1t1g.pdf pdf_icon

NSVMUN5312DW1T2G

MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mon

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSVMUN5212DW1T1G, NSVMUN5213DW1T3G, NSVMUN5214DW1T3G, NSVMUN5215DW1T1G, NSVMUN5233DW1T3G, NSVMUN5236T1G, NSVMUN5111DW1T3G, NSVMUN5113DW1T3G, BD139, NSVMUN5312DW1T3G, NSVMUN5314DW1T3G, NSVMUN5316DW1T1G, NSVMUN5331DW1T1G, NSVMUN5332DW1T1G, NSVMUN5333DW1T1G, NSVMUN5333DW1T3G, NSVMUN5334DW1T1G