All Transistors. NSVMUN5312DW1T2G Datasheet

 

NSVMUN5312DW1T2G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSVMUN5312DW1T2G
   SMD Transistor Code: 12
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT363

 NSVMUN5312DW1T2G Transistor Equivalent Substitute - Cross-Reference Search

   

NSVMUN5312DW1T2G Datasheet (PDF)

 0.1. Size:110K  onsemi
nsvmun5312dw1t3g.pdf

NSVMUN5312DW1T2G
NSVMUN5312DW1T2G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 0.2. Size:110K  onsemi
nsvmun5312dw1t2g.pdf

NSVMUN5312DW1T2G
NSVMUN5312DW1T2G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 5.1. Size:103K  onsemi
nsvmun5314dw1t3g.pdf

NSVMUN5312DW1T2G
NSVMUN5312DW1T2G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 5.2. Size:80K  onsemi
nsvmun5316dw1t1g.pdf

NSVMUN5312DW1T2G
NSVMUN5312DW1T2G

MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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