NSV60600MZ4T3G. Аналоги и основные параметры

Наименование производителя: NSV60600MZ4T3G

Маркировка: 60600

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 60 pf

Статический коэффициент передачи тока (hFE): 70

Корпус транзистора: SOT223

 Аналоги (замена) для NSV60600MZ4T3G

- подборⓘ биполярного транзистора по параметрам

 

NSV60600MZ4T3G даташит

 3.1. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60600MZ4T3G

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE(sat) PNP Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation -60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching application

 7.1. Size:110K  onsemi
 nsv60601mz4.pdf pdf_icon

NSV60600MZ4T3G

NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE(sat) NPN Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation 60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching applications

 9.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60600MZ4T3G

NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

 9.2. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60600MZ4T3G

NSS60101DMT 60 V, 1 A, Low VCE(sat) NPN Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

ПОКАЗАТЬ ЕЩЁ

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