All Transistors. NSV60600MZ4T3G Datasheet

 

NSV60600MZ4T3G Datasheet and Replacement


   Type Designator: NSV60600MZ4T3G
   SMD Transistor Code: 60600
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT223
      - BJT Cross-Reference Search

   

NSV60600MZ4T3G Datasheet (PDF)

 3.1. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60600MZ4T3G

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

 7.1. Size:110K  onsemi
 nsv60601mz4.pdf pdf_icon

NSV60600MZ4T3G

NSS60601MZ4,NSV60601MZ4T1G,NSV60601MZ4T3G60 V, 6.0 A, Low VCE(sat)NPN Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching applications

 9.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60600MZ4T3G

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.2. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60600MZ4T3G

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

SHOW MORE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KRA567U | UN621K | D11C1053 | CHDTA115TEGP | ZTX300 | BD544D | BC817-40W

Keywords - NSV60600MZ4T3G transistor datasheet

 NSV60600MZ4T3G cross reference
 NSV60600MZ4T3G equivalent finder
 NSV60600MZ4T3G lookup
 NSV60600MZ4T3G substitution
 NSV60600MZ4T3G replacement

 

 
Back to Top

 


 
.