Аналоги (замена) для A1013

 

 

A1013 Datasheet (PDF)

..1. a1013.pdf Size:240K _china

A1013 PNP silicon APPLICATION: Color TV Ver.Deflecation Output Applications. Color TV Class B Sound Output Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VTO-92L1Emitter-base voltage VEBO -6 V1. Emitter 2. Collector 3. BaseCollector curr

0.1. 2sa1013.pdf Size:209K _toshiba

0.2. ksa1013.pdf Size:55K _fairchild_semi

KSA1013Color TV Audio OutputColor TV Vertical Deflection OutputTO-92L11. Emitter 2. Collector 3. BasePNP EPITAXIAL SILICON TRANSISTORAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -160 VVEBO Emitter-Base Voltage -6 VIC Collector Current -1 AIB Base Current -0.5 AP

 0.3. ksa1013.pdf Size:86K _samsung

KSA1013 PNP EPITAXIAL SILICON TRANSISTORCOLOR TV AUDIO OUTPUTTO-92LCOLOR TV VERTICAL DEFLECTION OUTPUTABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -160 VEmitter-Base Voltage VEBO -6 VCollector Current IC -1 ABase Current IB -0.5 ACollector Dissipation PC 900 WJunction Temperature TJ

0.4. 2sa1013-r.pdf Size:293K _mcc

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

 0.5. 2sa1013-y.pdf Size:293K _mcc

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

0.6. 2sa1013-o.pdf Size:293K _mcc

MCCMicro Commercial ComponentsTM 2SA1013-R20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1013-OPhone: (818) 701-4933Fax: (818) 701-49392SA1013-YFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

0.7. ksa1013.pdf Size:366K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.8. 2sa1013.pdf Size:104K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTCs advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

0.9. 2sa1013.pdf Size:369K _secos

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High VoltageVCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1112Collector 22 Complementary to 2SC2383 23Base 333 JA DCLASSIFICATION OF hFE Millimete

0.10. 2sa1013.pdf Size:2681K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltag

0.11. 2sa1013.pdf Size:228K _lge

2SA1013 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High voltage:VCEO=-160V 8.2000.600 Large continuous collector current capability 0.800Complementary to 2SC2383 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640

0.12. 2sa1013 to-92mod.pdf Size:212K _lge

2SA1013 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.800Features6.200High voltage:VCEO=-160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SC2383 1.1000.4000.60013.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

0.13. bta1013k3.pdf Size:293K _cystek

Spec. No. : C233K3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1013K3Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B

0.14. 2sa1013.pdf Size:937K _blue-rocket-elect

2SA1013 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2383 High voltage, large continuous collector current capability, Complementary pair with 2SC2383.. / Applications ,

0.15. 2sa1013t.pdf Size:926K _blue-rocket-elect

2SA1013T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC2383T High voltage, large continuous collector current capability, Complementary pair with 2SC2383T. / Applications ,

0.16. 2sa1013.pdf Size:305K _kexin

SMD Type TransistorsPNP Transistors2SA10131.70 0.1 Features High voltage Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

0.17. a1013c.pdf Size:564K _feihonltd

MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -165V High switching speed PC 625mW 2SC2383 Complementary to 2SC2383 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

0.18. a1013a.pdf Size:358K _feihonltd

MAIN CHARACTERISTICS FEATURES IC -1.0A Epitaxial silicon VCEO -160V High switching speed PC 900mW C2383A Complementary to C2383A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit

0.19. 2sa1013.pdf Size:476K _fuxinsemi

0.20. 2sa1013.pdf Size:170K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon PNP Transistor 2SA1013DESCRIPTIONHigh Voltage and High CurrentVceo=-160V(Min.Excellent hFE LinearityLow NoiseComplement to Type 2SC2383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.AB

     

 

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